ON Semiconductor KSA910YSHTA

Brief Description: The KSA910YSHTA is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose applications. It is a single transistor with a maximum current collector of 50mA and a maximum DC current gain of 120 at 10mA and 5V.

Features:

• PNP transistor type
• Maximum current collector (Ic) of 50mA
• Maximum DC current gain (hFE) of 120 at 10mA and 5V
• Frequency transition of 100MHz
• Maximum power dissipation of 800mW
• Voltage collector-emitter breakdown of 150V
• Maximum voltage saturation (Vce) of 800mV at 1mA and 10mA
• Minimum current collector cutoff (ICBO) of 100nA
• Moisture Sensitivity Level (MSL) of 1 (unlimited)

Application Grade: The KSA910YSHTA is a general-purpose transistor suitable for a wide range of applications, including:

• Low-power amplifiers
• Switching circuits
• Driver circuits
• Power supplies
• Signal processing

Applications:

• Automotive electronics
• Industrial control systems
• Consumer electronics
• Medical devices
• Communications equipment

Additional Information: The KSA910YSHTA is available in a TO-226-3 or TO-92-3 Long Body (Formed Leads) package, with a Tape & Box (TB) packaging. However, it is important to note that this part is obsolete and may not be available for new designs.