ON Semiconductor BC548BBU

Brief Description: The BC548BBU is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, through-hole mounted transistor with a TO-226-3 or TO-92-3 package.

Features:

• Collector-base voltage (VCBO): 30V
• Collector-emitter breakdown voltage: 30V
• Collector-emitter saturation voltage: 250mV
• DC current gain (hFE) (min): 200 @ 2mA, 5V
• Frequency: 300MHz
• Gain bandwidth product: 300MHz
• Maximum collector current: 100mA
• Maximum power dissipation: 500mW
• Operating temperature: 150°C (TJ)
• RoHS compliant

Application Grade: The BC548BBU is an obsolete product, which means it is no longer recommended for new designs. However, it may still be suitable for existing applications or as a replacement part.

Applications:

• General-purpose amplification and switching
• Low-power audio amplifiers
• RF amplifiers
• Signal conditioning and buffering
• Switching and logic circuits

Key Information:

• The BC548BBU is a NPN transistor with a collector-base voltage of 30V and a collector-emitter breakdown voltage of 30V.
• It has a maximum collector current of 100mA and a maximum power dissipation of 500mW.
• The transistor has a high frequency response, with a gain bandwidth product of 300MHz and a frequency of 300MHz.
• The DC current gain (hFE) is 200 or higher at an operating current of 2mA and a voltage of 5V.
• The transistor is available in a TO-226-3 or TO-92-3 package and is suitable for through-hole mounting.

Overall, the BC548BBU is a general-purpose NPN transistor suitable for a range of applications, including amplification, switching, and signal conditioning. However, its obsolete status means it should be used with caution and only in existing applications or as a replacement part.