STMicroelectronics ST2310FX

Brief Description: The ST2310FX is a single NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It features a high breakdown voltage of 600V and a high current rating of 12A.

Features:

• High breakdown voltage: 600V
• High current rating: 12A
• High power dissipation: 65W
• High DC current gain (hFE): 6.5 at 7A and 5V
• Isolated case connection
• Lead-free and RoHS3 compliant
• Radiation hardening: No
• Operating temperature: 150°C TJ
• Peak reflow temperature: 245°C
• Moisture sensitivity level (MSL): 1 (unlimited)

Application Grade: The ST2310FX is designed for switching applications, making it suitable for use in power supplies, motor control, and other high-power applications.

Applications:

• Power supplies
• Motor control
• High-power switching
• Industrial control
• Automotive electronics
• Aerospace and defense electronics

Key Information:

• Transistor type: NPN
• Transistor element material: Silicon
• Configuration: Single
• Terminal position: Single
• Pin count: 3
• Number of elements: 1
• Mounting type: Through-hole
• Packaging: Tube
• Package/case: ISOWATT218FX
• Lead-free: Yes
• RoHS status: ROHS3 compliant
• Radiation hardening: No
• Operating temperature: 150°C TJ
• Peak reflow temperature: 245°C
• Moisture sensitivity level (MSL): 1 (unlimited)
• Max power dissipation: 65W
• Max collector current: 12A
• DC current gain (hFE) (min): 6.5 at 7A and 5V
• Current rating: 12A
• Current - collector cutoff (max): 1mA