ON Semiconductor BD536J

Brief Description: The BD536J is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for high-power applications. It features a TO-220-3 package and is suitable for through-hole mounting.

Features:

• High current capability: 8A maximum collector current
• High power dissipation: 50W maximum
• High frequency operation: 12MHz transition frequency
• High voltage rating: 60V maximum collector-emitter breakdown voltage
• Low saturation voltage: 800mV maximum at 600mA, 6A
• High DC current gain: 30 minimum at 2A, 2V
• Low collector cutoff current: 100μA maximum
• Operating temperature: 150°C maximum junction temperature
• Moisture sensitivity level: 1 (unlimited)

Application Grade: The BD536J is designed for high-power applications, such as power amplifiers, motor controls, and power supplies.

Applications:

• Power amplifiers
• Motor controls
• Power supplies
• High-power switching applications
• Industrial control systems
• Automotive applications (e.g., engine management systems, powertrain controls)

Note: The BD536J is an obsolete part, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available from distributors or through secondary markets.