ON Semiconductor BD442S

Product Description:

The BD442S is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, through-hole mounted device with a TO-126-3 package. The transistor is designed for switching applications and has a maximum power dissipation of 36W.

Features:

• PNP bipolar junction transistor (BJT) with a TO-126-3 package
• Through-hole mounting type
• Maximum power dissipation: 36W
• Maximum collector current: 4A
• Maximum collector-emitter voltage: 80V
• Maximum collector-base voltage: -80V
• DC current gain (hFE) minimum: 15
• Gain bandwidth product: 3MHz
• Operating temperature: 150°C TJ
• Lead-free and RoHS compliant
• Weight: 761mg

Application Grade:

The BD442S is an obsolete product, but it was designed for general-purpose switching applications. Its high power dissipation and high current handling capability make it suitable for applications that require high power switching.

Applications:

• Switching applications
• Power switching
• High-power switching
• General-purpose switching
• Automotive applications (obsolete)
• Industrial applications (obsolete)

Note: The product is obsolete and not qualified, which means it is no longer recommended for new designs. However, it may still be available for purchase from some distributors or through secondary markets.