ON Semiconductor MJ11016

Brief Description: The MJ11016 is a NPN Darlington transistor from ON Semiconductor, designed for high-power amplifier applications. It features a TO-204AA or TO-3 package and is non-RoHS compliant.

Features:

• Collector Base Voltage (VCBO): 120V
• Collector-Emitter Breakdown Voltage: 120V
• Collector Emitter Voltage (VCEO): 4V
• Continuous Collector Current: 30A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
• Frequency - Transition: 4MHz
• Maximum Power Dissipation: 200W
• Operating Temperature: -55°C to 200°C (TJ)
• Peak Reflow Temperature: 240°C
• Time@Peak Reflow Temperature-Max (s): 30

Application Grade: The MJ11016 is designed for high-power amplifier applications, making it suitable for use in audio amplifiers, power supplies, and other high-current applications.

Applications:

• Audio amplifiers
• Power supplies
• High-current applications
• Industrial control systems
• Automotive systems

Overall, the MJ11016 is a high-power NPN Darlington transistor with a maximum power dissipation of 200W, making it suitable for high-power amplifier applications. However, it is important to note that it is obsolete and non-RoHS compliant, which may limit its use in new designs.