STMicroelectronics 2N2222

Brief Description: The 2N2222 is a low-leakage current NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is a single-element, through-hole mounted device with a TO-206AA or TO-18-3 metal can package.

Features:

• Low-leakage current
• NPN transistor type
• Silicon element material
• Single-element configuration
• Through-hole mounting
• TO-206AA or TO-18-3 metal can package
• Lead-free and RoHS3 compliant
• Maximum power dissipation: 500mW
• Maximum collector current: 800mA
• Maximum collector-emitter voltage: 30V
• Maximum collector-base voltage: 60V
• Maximum collector-emitter breakdown voltage: 30V
• Maximum collector-base capacitance: 8pF
• Maximum DC current gain (hFE): 100 at 150mA and 10V
• Maximum gain bandwidth product: 250MHz
• Maximum transition frequency: 300MHz
• Maximum turn-off time: 285ns
• Maximum VCEsat: 1V

Application Grade: The 2N2222 is suitable for general-purpose applications, including switching, amplification, and oscillation.

Applications:

• Switching applications, such as relays and solenoids
• Amplification applications, such as audio and RF amplifiers
• Oscillation applications, such as oscillators and timers
• General-purpose applications, such as sensors and actuators
• Automotive applications, such as engine management systems and anti-lock braking systems
• Industrial applications, such as process control and automation systems
• Consumer applications, such as audio and video equipment