ON Semiconductor 2N6497

Brief Description: The 2N6497 is a NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for switching applications. It features a high power dissipation of 80W and a high current rating of 5A.

Features:

• High power dissipation: 80W
• High current rating: 5A
• Operating temperature range: -65°C to 150°C
• Gain bandwidth product: 5MHz
• Transition frequency: 5MHz
• DC current gain (hFE): 10 (min) at 2.5A, 10V
• Collector-emitter saturation voltage: 1V
• Collector-emitter breakdown voltage: 250V
• Collector-base breakdown voltage: 350V
• Emitter-base voltage (VEBO): 6V
• Package: TO-220-3 (through-hole)

Application Grade: The 2N6497 is designed for switching applications, making it suitable for use in power supplies, motor controls, and other high-power applications.

Applications:

• Power supplies
• Motor controls
• High-power switching applications
• Industrial control systems
• Automotive electronics

Key Information:

• Part number: 2N6497
• Manufacturer: ON Semiconductor
• Package: TO-220-3 (through-hole)
• Power dissipation: 80W
• Current rating: 5A
• Operating temperature range: -65°C to 150°C
• Gain bandwidth product: 5MHz
• Transition frequency: 5MHz
• DC current gain (hFE): 10 (min) at 2.5A, 10V
• Collector-emitter saturation voltage: 1V
• Collector-emitter breakdown voltage: 250V
• Collector-base breakdown voltage: 350V
• Emitter-base voltage (VEBO): 6V

Note: The 2N6497 is obsolete and not RoHS compliant, which may limit its availability and suitability for new designs.