STMicroelectronics BD139

Brief Description: The BD139 is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element configuration transistor with a maximum collector current of 1.5A and a maximum power dissipation of 1.25W.

Features:

• NPN transistor type
• Single-element configuration
• Maximum collector current: 1.5A
• Maximum power dissipation: 1.25W
• Collector-base voltage (VCBO): 80V
• Collector-emitter breakdown voltage: 80V
• Collector-emitter saturation voltage: 500mV
• DC current gain (hFE): 25 (min) at 150mA, 2V
• Operating temperature range: -55°C to 150°C
• Mounting type: Through-hole
• Number of pins: 3
• Package/case: TO-225AA, TO-126-3
• Lead-free: Contains lead
• RoHS status: Non-RoHS compliant

Application Grade: The BD139 is an obsolete product, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available for purchase from distributors or other sources.

Applications: The BD139 is suitable for a variety of applications, including:

• General-purpose switching and amplification
• Power control and regulation
• Audio and video amplification
• Motor control and drive
• Industrial automation and control

Please note that the BD139 is an obsolete product, and its availability and suitability for new designs may be limited. It is recommended to use newer and more modern components for new designs.