TT Electronics 2N3501

Product Description:

The 2N3501 is a NPN bipolar junction transistor (BJT) manufactured by Central Semiconductor. It is a single-element, through-hole mounted device with a TO-39 package. The transistor is designed for switching applications and has a maximum power dissipation of 1W.

Features:

• Collector-base voltage (VCBO): 150V
• Collector-emitter breakdown voltage: 150V
• Collector-emitter saturation voltage: 400mV
• DC current gain (hFE): 100 (minimum)
• Frequency - transition: 150MHz
• Gain bandwidth product: 150MHz
• Maximum collector current: 300mA
• Maximum operating temperature: 150°C
• Minimum operating temperature: -65°C
• Mount: Through-hole
• Package / case: TO-39
• Pin count: 3
• Polarity: NPN
• Power dissipation (max): 1W
• RoHS compliant

Application Grade:

The 2N3501 is designed for general-purpose switching applications, making it suitable for a wide range of applications including:

• Power switching
• Signal switching
• Amplification
• Level shifting

Applications:

The 2N3501 can be used in various applications such as:

• Power supplies
• Motor control
• Audio amplifiers
• Data transmission
• Industrial control systems
• Automotive electronics
• Medical devices

Overall, the 2N3501 is a reliable and versatile transistor that can be used in a wide range of applications where high-frequency switching and moderate power dissipation are required.