Multicomp 2N5195

Brief Description: The 2N5195 is a PNP bipolar junction transistor (BJT) manufactured by Rochester Electronics, LLC. It is a single transistor with a maximum current collector of 4A and a maximum voltage collector-emitter breakdown of 80V.

Features:

• Maximum current collector: 4A
• Maximum current collector cutoff: 1mA
• DC current gain (hFE) minimum: 20 at 1.5A and 2V
• Frequency transition: 2MHz
• Operating temperature: 150°C (TJ)
• Power maximum: 40W
• Voltage collector-emitter breakdown maximum: 80V
• Vce saturation maximum: 1.2V at 1A, 4A

Application Grade: The 2N5195 is an obsolete product, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available in limited quantities from distributors or through secondary markets.

Applications: The 2N5195 is suitable for a variety of applications, including:

• Power amplifiers
• Switching circuits
• Driver circuits
• Power supplies
• Industrial control systems
• Automotive applications

Key Information:

• Transistor type: PNP
• Package / Case: TO-225AA, TO-126-3
• Mounting type: Through Hole
• Packaging: Bulk
• RoHS status: Non-RoHS compliant
• MSL: 1 (Unlimited)
• Supplier device package: SOT-32-3

Overall, the 2N5195 is a high-power PNP transistor with a maximum current collector of 4A and a maximum voltage collector-emitter breakdown of 80V. It is suitable for a variety of applications, including power amplifiers, switching circuits, and power supplies. However, due to its obsolete status, it may be difficult to find or obtain this product.