Multicomp 2N6341

Brief Description: The 2N6341 is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, through-hole mounted device with a TO-204AA or TO-3 package.

Features:

• Collector-base voltage (VCBO): 180V
• Collector-emitter breakdown voltage (VCEO): 150V
• Collector-emitter saturation voltage (VCE(sat)): 1.8V
• DC current gain (hFE): 30 (minimum) at 10A and 2V
• Gain bandwidth product: 40MHz
• Maximum collector current: 25A
• Maximum power dissipation: 200W
• Operating temperature: -65°C to 200°C (TJ)
• Polarity/Channel type: NPN
• Transistor application: Switching
• Transistor element material: Silicon
• Transistor type: NPN
• Transition frequency: 40MHz

Application Grade: The 2N6341 is an obsolete device, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be used in existing applications or in new designs where a similar device is not available.

Applications: The 2N6341 is suitable for switching applications, such as:

• Power amplifiers
• Switch-mode power supplies
• Motor control
• Audio amplifiers
• Industrial control systems

Note that the device is no longer being manufactured, so new designs should consider alternative devices that meet the same specifications.