STMicroelectronics PD57006S

Product Brief Description:

The PD57006S is a surface-mount N-channel LDMOS (Lateral Diffused Metal-Oxide Semiconductor) RF power MOSFET from STMicroelectronics. It is designed for enhancement mode operation and is suitable for amplifier applications.

Features:

• N-channel LDMOS technology
• Enhancement mode operation
• Surface-mount package (PowerSO-10 Exposed Bottom Pad)
• 3-pin package with dual terminals
• Continuous drain current (ID) of 1A
• Drain to source breakdown voltage (Vds) of 65V
• Gate to source voltage (Vgs) of 20V
• Frequency range of 945MHz
• Gain of 15dB
• Power output of 6W
• Power dissipation of 20W
• Operating temperature range of -65°C to 150°C
• Moisture sensitivity level (MSL) of 3 (168 hours)
• RoHS3 compliant

Application Grade:

The PD57006S is designed for high-power amplifier applications in the RF frequency range. It is suitable for use in a variety of applications, including:

• RF power amplifiers
• Wireless communication systems
• Radar systems
• Satellite communication systems

Applications:

The PD57006S can be used in a variety of applications, including:

• RF power amplifiers for wireless communication systems
• Radar systems and satellite communication systems
• High-power amplifiers for industrial and medical applications
• Power amplifiers for automotive and aerospace applications

Note: The product is obsolete and not qualified, and it is not compliant with Reach regulations.