STMicroelectronics STAC1011-350

Brief Description: The STAC1011-350 is a high-power, N-channel, LDMOS (Lateral Double-Diffused MOSFET) RF power transistor from STMicroelectronics. It operates in enhancement mode and is designed for amplifier applications.

Features:

• High power output: 350W
• High frequency operation: 1.03GHz to 1.09GHz
• High gain: 15dB
• Low voltage operation: 80V
• RoHS3 compliant
• Surface mount package: STAC265B (tube packaging)
• Moisture Sensitivity Level (MSL) 1 (unlimited)
• Operating mode: Enhancement mode
• Transistor type: LDMOS
• Transistor element material: Silicon
• Polarity/Channel type: N-channel
• Pin count: 2
• Terminal form: Flat
• Terminal position: Dual

Application Grade: The STAC1011-350 is designed for high-power amplifier applications in the RF frequency range.

Applications:

• RF power amplifiers for wireless communication systems (e.g., cellular, Wi-Fi, Bluetooth)
• High-power amplifier modules for radar and satellite communication systems
• Power amplifiers for industrial, scientific, and medical (ISM) applications
• High-power amplifier modules for automotive radar and communication systems

Note: The product information provided is based on the given parameters and may not cover all aspects of the product's performance, specifications, or applications. It is recommended to consult the manufacturer's datasheet or product documentation for more detailed information.