CEL 2SC4536-AZ

Brief Description: The 2SC4536-AZ is a NPN bipolar junction transistor (BJT) designed for RF applications. It is a surface-mount device with a TO-243AA package and is RoHS compliant.

Features:

• Noise Figure: 2dB @ 1GHz
• Operating Temperature: 150°C TJ
• Power Dissipation: 2W
• Collector-Emitter Breakdown Voltage: 15V
• Current-Collector (Ic) (Max): 250mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA 10V
• Gain: 7.2dB
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Application Grade: The 2SC4536-AZ is designed for high-frequency RF applications, making it suitable for use in wireless communication systems, radar systems, and other applications that require low noise and high gain.

Applications:

• Wireless communication systems
• Radar systems
• Satellite communication systems
• Other high-frequency RF applications requiring low noise and high gain

Key Information:

• The 2SC4536-AZ is a NPN bipolar junction transistor (BJT) designed for RF applications.
• It has a noise figure of 2dB @ 1GHz, making it suitable for use in high-frequency applications.
• The device has a power dissipation of 2W and a collector-emitter breakdown voltage of 15V.
• The device has a current-collector (Ic) (Max) of 250mA and a DC current gain (hFE) (Min) of 60 @ 50mA 10V.
• The device is RoHS compliant and has a moisture sensitivity level (MSL) of 1 (Unlimited).
• The device is packaged in a TO-243AA package and is surface-mountable.