Comchip Technology CDBJFSC10650-G

Brief Description: The CDBJFSC10650-G is a Silicon Carbide Schottky diode from Comchip Technology, designed for high-power rectification applications. It features a TO-220-2 full pack package and is available in a tube packaging.

Features:

• Silicon Carbide Schottky diode technology for high-power rectification
• High current handling capability: 10A DC average rectified current
• Low reverse leakage current: 100μA at 650V
• Low capacitance: 710pF at 0V and 1MHz
• Operating temperature range: -55°C to 175°C
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• Through-hole mounting type
• ROHS3 compliant

Application Grade: The CDBJFSC10650-G is designed for high-power rectification applications, such as:

• Power supplies
• Converters
• Inverters
• Motor drives
• Renewable energy systems

Applications:

• High-power rectification in power supplies and converters
• High-voltage, high-current applications in motor drives and renewable energy systems
• High-temperature applications requiring a wide operating temperature range
• Applications requiring low capacitance and low reverse leakage current

Overall, the CDBJFSC10650-G is a high-performance Schottky diode suitable for demanding power electronics applications. Its Silicon Carbide technology and high current handling capability make it an attractive option for designers seeking to optimize their power conversion systems.