STMicroelectronics STGP20M65DF2

Brief Description: The STGP20M65DF2 is a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-power applications. It is a single IGBT with a maximum current collector of 40A and a maximum power rating of 166W.

Features:

• Trench Field Stop IGBT technology for improved reliability and performance
• Maximum current collector of 40A and pulsed current collector of 80A
• Maximum power rating of 166W
• Operating temperature range of -55°C to 175°C
• Reverse recovery time of 166ns
• Switching energy of 140μJ (on) and 560μJ (off)
• Gate charge of 63nC
• Voltage collector-emitter breakdown of 650V
• Mounting type: Through Hole
• Package/Case: TO-220-3

Application Grade: The STGP20M65DF2 is designed for high-power applications, such as:

• Motor drives
• Power supplies
• Industrial automation
• Renewable energy systems

Applications:

• High-power switching applications
• Power conversion and conditioning
• Motor control and drives
• Power distribution and transmission
• Renewable energy systems, such as solar and wind power

Overall, the STGP20M65DF2 is a high-power IGBT designed for demanding applications that require high current, high power, and high reliability. Its Trench Field Stop technology and robust design make it suitable for a wide range of applications, from industrial automation to renewable energy systems.