STMicroelectronics STGD6M65DF2

Brief Description: The STGD6M65DF2 is a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-power switching applications. It features a standard input type and operates over a wide temperature range of -55°C to 175°C.

Features:

• Trench Field Stop IGBT technology for improved switching performance
• Standard input type for easy integration
• High power rating of 88W
• High voltage rating of 650V
• High current rating of 12A (continuous) and 24A (pulsed)
• Low reverse recovery time of 140ns
• Low switching energy of 36μJ (on) and 200μJ (off)
• High gate charge of 21.2nC
• Operating temperature range of -55°C to 175°C
• Surface mount package (TO-252-3, DPak) with a tape and reel packaging option

Application Grade: The STGD6M65DF2 is designed for high-power switching applications in industrial, automotive, and consumer electronics. Its high voltage and current ratings make it suitable for applications such as:

• Motor control
• Power supplies
• Power conversion
• Renewable energy systems
• Automotive systems

Applications:

• High-power switching applications
• Motor control systems
• Power supplies for industrial and consumer electronics
• Power conversion systems for renewable energy and automotive applications
• High-voltage and high-current applications in industrial and automotive systems

Overall, the STGD6M65DF2 is a high-performance IGBT that offers a combination of high power, high voltage, and high current ratings, making it suitable for a wide range of applications in various industries.