ON Semiconductor TIG110BF

Brief Description: The TIG110BF is a single N-channel insulated-gate bipolar transistor (IGBT) from ON Semiconductor, designed for power control applications. It features a TO-220-3 full pack package and is RoHS compliant.

Features:

• Collector-Emitter Breakdown Voltage: 600V
• Collector Emitter Voltage (VCEO): 2V
• Current - Collector Pulsed (Icm): 108A
• Gate Charge: 95nC
• Gate-Emitter Thr Voltage-Max: 6V
• Max Collector Current: 27A
• Max Power Dissipation: 2W
• Operating Temperature (Max.): 150°C
• Turn Off Time-Nom (toff): 450 ns
• Turn On Time: 300 ns
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A

Application Grade: The TIG110BF is designed for power control applications, making it suitable for use in power supplies, motor drives, and other high-power applications.

Applications: The TIG110BF can be used in a variety of applications, including:

• Power supplies
• Motor drives
• Industrial automation
• Renewable energy systems
• Automotive applications

Key Information:

• Package: TO-220-3 full pack
• Package type: Through Hole
• Number of Pins: 3
• Polarity/Channel Type: N-CHANNEL
• Power - Max: 2W
• Radiation Hardening: No
• RoHS Status: RoHS Compliant
• Published: 2010

Overall, the TIG110BF is a robust and reliable IGBT designed for high-power applications, with a wide range of features and specifications that make it suitable for use in a variety of industries and applications.