Solid State Manufacturing 1N5804

Brief Description: The 1N5804 is a fast recovery rectifier diode manufactured by Microsemi Corporation. It is a single-element, axial-lead, through-hole mounted diode with a forward voltage drop of 975mV and a maximum forward current of 2.5A.

Features:

• Fast recovery time of ≤ 500ns at Io > 200mA
• Reverse recovery time of 25ns
• Maximum reverse voltage of 100V
• Maximum repetitive reverse voltage of 100V
• Maximum operating temperature of 175°C
• Operating temperature range of -65°C to 175°C
• High reliability
• Radiation-hardened

Application Grade: The 1N5804 is designed for high-reliability applications, making it suitable for use in aerospace, defense, and industrial systems.

Applications:

• Power supplies
• Switching power supplies
• DC-DC converters
• Motor control systems
• Aerospace and defense systems
• Industrial automation systems
• Medical equipment
• Telecommunications equipment

Key Information:

• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Reverse Recovery Time: 25ns
• Maximum Reverse Voltage (DC): 100V
• Maximum Operating Temperature: 175°C
• Operating Temperature Range: -65°C to 175°C
• Forward Current: 2.5A
• Reverse Leakage Current: 1μA @ 100V
• Capacitance: 25pF @ 10V, 1MHz
• Average Rectified Current: 1A
• Peak Non-Repetitive Surge Current: 35A
• Radiation Hardening: Yes

Overall, the 1N5804 is a high-reliability, fast recovery rectifier diode suitable for a wide range of applications requiring high performance and reliability.