Multicomp 2N3584

Brief Description: The 2N3584 is a high-reliability, single NPN bipolar junction transistor (BJT) from Microsemi Corporation. It is designed for switching applications and features a high collector-base voltage, high collector-emitter voltage, and high power dissipation.

Features:

• High collector-base voltage (VCBO): 375V
• High collector-emitter voltage (VCEO): 250V
• High power dissipation: 2.5W
• High transition frequency: 10MHz
• High DC current gain (hFE): 25
• High reliability
• Through-hole mounting
• Non-RoHS compliant

Application Grade: The 2N3584 is designed for high-reliability applications, making it suitable for use in critical systems where high performance and reliability are required.

Applications:

• Switching applications
• Power control applications
• High-voltage applications
• High-power applications
• Automotive applications
• Industrial applications
• Aerospace applications

Key Information:

• Collector-base voltage (VCBO): 375V
• Collector-emitter voltage (VCEO): 250V
• Maximum collector current: 2A
• Maximum power dissipation: 2.5W
• Minimum operating temperature: -65°C
• Maximum operating temperature: 200°C
• Transition frequency: 10MHz
• DC current gain (hFE): 25
• Packaging: Bulk
• Mounting: Through-hole
• Polarity/Channel Type: NPN
• Radiation Hardening: No
• RoHS Status: Non-RoHS compliant
• Pbfree Code: No
• ECCN Code: EAR99
• JEDEC-95 Code: TO-66
• JESD-30 Code: O-MBFM-P2
• JESD-609 Code: e0

Overall, the 2N3584 is a high-reliability, high-performance BJT designed for switching applications where high voltage, high power, and high reliability are required.