AMI Semiconductor MCH6331-TL-E

Brief Description: The MCH6331-TL-E is a surface-mount, P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is designed for high-frequency and high-power applications.

Features:

• Continuous drain current (ID) of 3.5A
• Drain-to-source voltage (Vdss) of 30V
• Drive voltage (Max Rds On, Min Rds On) of 4V and 10V
• FET type: P-channel
• Fall time (Typ) of 19ns
• Gate charge (Qg) (Max) of 5nC at Vgs of 10V
• Gate-to-source voltage (Vgs) of 20V
• Input capacitance (Ciss) (Max) of 250pF at Vds of 10V
• Power dissipation of 1.5W
• Rds On (Max) of 98mΩ at ID of 1.5A and Vgs of 10V
• Rise time of 12ns
• Turn off delay time of 26ns
• Turn on delay time of 5.4ns
• Operating temperature range of -40°C to 150°C

Application Grade: The MCH6331-TL-E is designed for high-frequency and high-power applications, such as:

• Switching power supplies
• Motor control
• Power conversion
• High-speed data transmission

Applications:

• Switching power supplies for consumer electronics, industrial equipment, and automotive applications
• Motor control for robotics, industrial automation, and automotive applications
• Power conversion for renewable energy systems, electric vehicles, and industrial equipment
• High-speed data transmission for telecommunications, networking, and computing applications

Note: The MCH6331-TL-E is an obsolete part, and it is recommended to use alternative products for new designs.