Microchip 2N4029

Brief Description: The 2N4029 is a PNP bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is a single transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum power dissipation of 500mW.

Features:

• PNP transistor type
• Maximum collector-emitter breakdown voltage: 80V
• Maximum power dissipation: 500mW
• Operating temperature range: -65°C to 200°C
• Mounting type: Through-hole
• Package: TO-18 or TO-206AA metal can
• Number of pins: 3
• Number of elements: 1
• Radiation hardening: No
• RoHS compliant: No

Application Grade: The 2N4029 is suitable for general-purpose applications that require a PNP transistor with a high breakdown voltage and moderate power dissipation.

Applications:

• Power amplifiers
• Switching circuits
• Driver circuits
• Power supplies
• Audio amplifiers
• Industrial control systems
• Automotive applications

Key Specifications:

• Transistor type: PNP
• Collector-emitter breakdown voltage: 80V
• Power dissipation: 500mW
• Operating temperature range: -65°C to 200°C
• Mounting type: Through-hole
• Package: TO-18 or TO-206AA metal can
• Number of pins: 3
• Number of elements: 1

Additional Notes:

• The 2N4029 is not RoHS compliant, which may limit its use in certain applications.
• The transistor has a high collector-emitter breakdown voltage, making it suitable for high-voltage applications.
• The power dissipation of 500mW is moderate, making it suitable for a range of power applications.
• The operating temperature range of -65°C to 200°C is wide, allowing for use in a variety of environments.