Microchip MX2N5114

Brief Description: The MX2N5114 is a P-Channel JFET (Junction Field-Effect Transistor) manufactured by Microsemi Corporation. It is a single-element device designed for high-power applications and is available in a through-hole package.

Features:

• P-Channel JFET configuration
• Operating temperature range: -65°C to 200°C (TJ)
• Power dissipation: 500mW
• Resistance: 75 Ohms (RDS(On))
• Gate-to-source voltage: 30V
• Input capacitance: 25pF (max) at Vds
• Drain current: 90mA at Vds (Vgs=0)
• Voltage cutoff: 10V at Id (1nA)
• Through-hole mounting
• Non-RoHS compliant

Application Grade: The MX2N5114 is designed for military and aerospace applications, as indicated by its MIL-PRF-19500 series designation. It is suitable for high-power, high-temperature, and high-voltage applications.

Applications:

• High-power switching and amplification
• High-temperature and high-voltage applications
• Military and aerospace electronics
• Industrial control systems
• Power supplies and converters
• High-frequency applications

Note: The information provided is based on the product parameters and is subject to change. It is recommended to consult the manufacturer's datasheet and documentation for the most up-to-date and accurate information.