Microchip MS1336

Brief Description: The MS1336 is a NPN RF bipolar junction transistor (BJT) from Microsemi Corporation, designed for high-frequency applications. It features a collector-base voltage of 36V, a collector-emitter breakdown voltage of 18V, and a maximum power dissipation of 70W.

Features:

• NPN RF bipolar junction transistor
• Collector-base voltage: 36V
• Collector-emitter breakdown voltage: 18V
• Collector-emitter voltage: 18V
• DC current gain (hFE): 20 (min) at 250mA, 5V
• Frequency - transition: 175MHz
• Gain: 10dB
• Maximum collector current: 8A
• Maximum power dissipation: 70W
• Operating temperature: 200°C (TJ)
• Package: M135 (chassis, stud mount)
• Number of pins: 4
• RoHS compliant
• Pbfree code: no

Application Grade: The MS1336 is designed for high-frequency applications, such as RF amplifiers, oscillators, and mixers. Its high power dissipation and high-frequency performance make it suitable for use in industrial, commercial, and military applications.

Applications:

• RF amplifiers
• Oscillators
• Mixers
• Industrial applications
• Commercial applications
• Military applications

Note: The MS1336 is obsolete and has a factory lead time of 32 weeks. It is recommended to consider alternative products for new designs.