Microchip JAN2N2880

Brief Description: The JAN2N2880 is a high-reliability, single NPN bipolar junction transistor (BJT) from Microsemi Corporation. It is designed for switching applications and features a high collector-base voltage, high current gain, and a wide operating temperature range.

Features:

• High collector-base voltage (VCBO): 110V
• High collector-emitter voltage (VCEO): 80V
• High current gain (hFE): 40 at 1A, 2V
• High power dissipation: 2W
• Wide operating temperature range: -65°C to 200°C
• High transition frequency: 30MHz
• High collector current: 5A
• High emitter-base voltage: 8V

Application Grade: The JAN2N2880 is designed for military and aerospace applications, making it suitable for high-reliability and high-performance systems.

Applications:

• Switching applications in military and aerospace systems
• High-reliability and high-performance systems requiring a high-power, high-voltage, and high-current BJT
• Applications where a wide operating temperature range is required
• Systems requiring a high transition frequency and high current gain

Overall, the JAN2N2880 is a high-reliability, high-performance BJT designed for switching applications in military and aerospace systems. Its high collector-base voltage, high current gain, and wide operating temperature range make it suitable for a variety of applications requiring high reliability and high performance.