Microchip VRF157FL

Brief Description: The VRF157FL is a single N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for RF applications. It features a high gain of 21dB and a high power output of 600W.

Features: * High gain: 21dB * High power output: 600W * N-Channel MOSFET configuration * Single element * 4-pin package * Flat terminal form * Dual terminal position * TIN SILVER COPPER terminal finish * Operating temperature range: -65°C to 200°C * Moisture Sensitivity Level (MSL): 1 (Unlimited) * RoHS compliant

Application Grade: The VRF157FL is designed for high-power RF applications, such as amplifiers and power amplifiers.

Applications: * RF amplifiers * Power amplifiers * High-power electronic systems * Military and aerospace applications * Industrial and commercial applications requiring high-power RF performance

Key Parameters: * Current rating: 60A * Current - test: 800mA * Voltage rated: 170V * Frequency: 80MHz * Gain: 21dB * Power - output: 600W * Operating temperature range: -65°C to 200°C * Moisture Sensitivity Level (MSL): 1 (Unlimited) * RoHS compliant

Additional Information: * The VRF157FL is in production and has a factory lead time of 32 weeks. * It is not radiation-hardened and has a published date of 1998.