Microchip 2N4150S

Product Description:

The 2N4150S is a NPN bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is a single-element, through-hole mounted device designed for switching applications. The transistor is non-RoHS compliant and does not have radiation hardening capabilities.

Features:

• NPN polarity and channel type
• Single-element configuration
• Through-hole mount
• Maximum power dissipation: 1W
• Maximum operating temperature: 200°C
• Maximum collector current: 10A
• Minimum operating temperature: -65°C
• DC current gain (hFE): 10 (minimum)
• Collector-emitter voltage (VCEO): 70V
• Collector-base voltage (VCBO): 100V

Application Grade:

The 2N4150S is designed for switching applications, making it suitable for use in electronic circuits that require high-speed switching and moderate power handling.

Applications:

• Switching circuits in industrial automation systems
• Power supplies and voltage regulators
• Motor control systems
• Audio and video equipment
• Telecommunications equipment
• Medical devices and equipment

Key Information:

• Turn-on time: 550ns (maximum)
• Turn-off time: 2000ns (maximum)
• Pin count: 2
• Terminal form: wire
• Terminal finish: tin lead
• Radiation hardening: no
• RoHS compliance: no
• Pb-free code: no
• Part status: active
• Lifecycle status: in production

Overall, the 2N4150S is a high-performance bipolar junction transistor designed for switching applications in various industries. Its high power handling and moderate operating temperature range make it suitable for use in a wide range of electronic circuits.