STMicroelectronics 2N918

Brief Description: The 2N918 is a NPN bipolar junction transistor (BJT) designed for RF applications. It is manufactured by Central Semiconductor and is available in a TO-72 package.

Features:

• Collector Base Voltage (VCBO): 30V
• Collector-Emitter Breakdown Voltage: 15V
• Collector-Emitter Saturation Voltage: 1V
• Collector Emitter Voltage (VCEO): 15V
• Collector-Base Capacitance-Max: 3pF
• Continuous Collector Current: 50mA
• DC Current Gain-Min (hFE): 20
• Frequency - Transition: 600MHz
• Gain Bandwidth Product: 600MHz
• Power Dissipation (Max): 200mW
• Operating Temperature Range: -65°C to 150°C

Application Grade: The 2N918 is designed for high-frequency applications, specifically for use in RF amplifiers.

Applications:

• RF amplifiers
• High-frequency signal amplification
• Low-power applications
• General-purpose amplification

Key Information:

• The 2N918 is a NPN bipolar junction transistor (BJT) designed for RF applications.
• It has a collector base voltage of 30V and a collector-emitter breakdown voltage of 15V.
• The transistor has a high-frequency transition frequency of 600MHz and a gain bandwidth product of 600MHz.
• It can handle a maximum collector current of 50mA and has a power dissipation of 200mW.
• The operating temperature range is -65°C to 150°C.
• The transistor is available in a TO-72 package and is RoHS compliant.