Microchip VRF161

Brief Description: The VRF161 is a single N-channel metal-oxide semiconductor (MOS) field-effect transistor (FET) designed for RF amplifier applications. It features a high power output of 200W and a high gain of 24dB, making it suitable for high-frequency applications.

Features:

• High power output: 200W
• High gain: 24dB
• Operating temperature: 200°C
• Operating mode: Enhancement mode
• FET technology: Metal-oxide semiconductor
• Transistor type: N-Channel
• Transistor element material: Silicon
• Voltage rated: 170V
• Current rating: 20A
• Frequency: 30MHz
• Package: M174 (flat radial package)
• Surface mount: Yes
• Moisture sensitivity level: 1 (unlimited)

Application Grade: The VRF161 is designed for high-frequency amplifier applications, making it suitable for use in RF communication systems, satellite communications, and other high-frequency applications.

Applications:

• RF amplifiers
• Satellite communications
• High-frequency communication systems
• Military and aerospace applications
• Industrial and scientific research applications

Note: The VRF161 is currently in the sampling phase, with a factory lead time of 32 weeks. It is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).