Microchip Technology 2N3419

Brief Description: The 2N3419 is a NPN bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is a single-transistor device designed for general-purpose applications.

Features:

• Collector-base voltage (VCBO): 125V
• Collector-emitter voltage (VCEO): 80V
• Maximum collector current (IC): 3A
• Maximum operating temperature: 200°C
• Maximum power dissipation: 1W
• Minimum operating temperature: -65°C
• Mounting type: Through-hole
• Number of pins: 3
• Packaging: Bulk
• Radiation hardening: No
• RoHS compliance: Non-compliant

Application Grade: The 2N3419 is a general-purpose transistor suitable for a wide range of applications, including:

• Low-power amplifiers
• Switching applications
• Driver circuits
• General-purpose switching and amplification

Applications:

• Industrial control systems
• Automotive electronics
• Consumer electronics
• Medical devices
• Aerospace and defense systems

The 2N3419 is suitable for applications where a low-power, general-purpose transistor is required. Its high collector-base voltage and collector-emitter voltage make it suitable for applications where high voltage is required. Its high maximum operating temperature and power dissipation make it suitable for applications where high temperatures and power consumption are present.