Microchip Technology APT6030BVRG

Brief Description: The APT6030BVRG is a N-Channel Power MOSFET from Microsemi Corporation, designed for high-power applications. It features a continuous drain current of 21A and a drain-to-source voltage of 600V.

Features:

• Continuous drain current: 21A
• Drain-to-source voltage: 600V
• FET type: N-Channel
• Gate-to-source voltage: 30V
• Input capacitance: 3.75nF
• Input capacitance (Ciss): 3750pF @ 25V
• Power dissipation: 298W
• Rise time: 10ns
• Fall time: 8ns
• Turn-on delay time: 12ns
• Turn-off delay time: 47ns
• Rds(on) max: 300mOhm @ 10.5A, 10V
• Gate charge (Qg): 150nC @ 10V
• Operating temperature range: -55°C to 150°C
• Mounting type: Through-hole
• Package: TO-247-3
• Packaging: Tube
• RoHS compliant

Application Grade: The APT6030BVRG is designed for high-power applications, such as:

• Power supplies
• Motor drives
• Power conversion
• Renewable energy systems

Applications:

• High-power switching
• High-voltage applications
• High-current applications
• Power conversion and conditioning
• Motor control and drives
• Renewable energy systems

Note: The information provided is based on the product parameters and is subject to change. It is recommended to consult the manufacturer's datasheet and specifications for the most up-to-date information.