Microchip Technology JAN1N4479US

Brief Description: The JAN1N4479US is a single-element, unidirectional Zener diode manufactured by Microsemi Corporation. It is designed for surface mount applications and features a metalurgically bonded construction.

Features:

• Metalurgically bonded construction for improved reliability and performance
• Isolated case connection for reduced noise and interference
• Low reverse leakage current of 50nA at 31.2V
• High operating temperature range of -65°C to 175°C
• Low impedance of 30 Ohms
• High power dissipation of 1.5W
• Surface mount package with a package code of SQ-MELF, A
• Non-RoHS compliant

Application Grade: The JAN1N4479US is a military-grade diode, designed to meet the requirements of MIL-PRF-19500/406. It is qualified and tested to ensure high reliability and performance in harsh environments.

Applications:

• Military and aerospace applications requiring high reliability and performance
• Industrial and commercial applications requiring high power dissipation and operating temperature range
• Medical and healthcare applications requiring high reliability and isolation
• Automotive applications requiring high power dissipation and operating temperature range

Key Information:

• Diode type: Zener diode
• Zener voltage: 39V
• Forward voltage (max): 1V at 200mA
• Reverse leakage current: 50nA at 31.2V
• Operating temperature range: -65°C to 175°C
• Power dissipation: 1.5W
• Package type: Surface mount (SQ-MELF, A)
• Mounting type: Surface mount
• Terminal finish: Tin/Lead (Sn/Pb)
• Radiation hardening: No
• RoHS compliance: Non-RoHS compliant

Overall, the JAN1N4479US is a high-reliability, high-performance Zener diode designed for military and aerospace applications, as well as industrial and commercial applications requiring high power dissipation and operating temperature range.