ON Semiconductor MJ802

Brief Description: The MJ802 is a NPN bipolar junction transistor (BJT) manufactured by Rochester Electronics, LLC. It is a single-element transistor with a collector current of 30A and a transition frequency of 2MHz. The transistor is designed for through-hole mounting and is available in a TO-204AA or TO-3 package.

Features:

• NPN bipolar junction transistor (BJT)
• Single-element configuration
• Collector current (Ic) up to 30A
• DC current gain (hFE) minimum of 25 at Ic = 7.5A and Vce = 2V
• Transition frequency of 2MHz
• Collector-emitter breakdown voltage of 90V
• Vce saturation of 800mV at Ib = 750mA and Ic = 7.5A
• Power dissipation of 200W
• Through-hole mounting
• Available in TO-204AA or TO-3 package
• Non-RoHS compliant

Application Grade: The MJ802 is a commercial-grade transistor, suitable for general-purpose applications.

Applications: The MJ802 is designed for use in amplifier applications, where its high current capability and high frequency performance make it suitable for a range of applications, including:

• Power amplifiers
• Audio amplifiers
• RF amplifiers
• Switching applications
• Driver circuits
• Power supply applications

Overall, the MJ802 is a high-power, high-frequency NPN BJT that is well-suited for a range of amplifier applications. Its high current capability and high frequency performance make it an attractive option for designers seeking a reliable and efficient transistor solution.