ON Semiconductor MCH5837-TL-E

Brief Description: The MCH5837-TL-E is a surface-mount N-Channel MOSFET with a Schottky diode isolated feature, designed for high-frequency and high-speed applications. It is a 6-SMD (5 leads) package with a maximum power dissipation of 800mW and a maximum operating temperature of 150°C.

Features:

• N-Channel MOSFET with Schottky diode isolated feature
• Surface-mount package (6-SMD, 5 leads)
• Maximum power dissipation: 800mW
• Maximum operating temperature: 150°C
• Maximum drain current (Id): 2A
• Maximum drain-to-source voltage (Vdss): 20V
• Maximum gate charge (Qg): 1.8nC @ 4V
• Maximum input capacitance (Ciss): 115pF @ 10V
• Moisture Sensitivity Level (MSL): 3 (168 hours)

Application Grade: The MCH5837-TL-E is designed for high-frequency and high-speed applications, making it suitable for use in:

• Power switching and control
• High-speed data transmission
• High-frequency signal processing
• Automotive and industrial applications

Applications:

• Power supplies and converters
• Motor control and drives
• High-speed data transmission systems
• Automotive and industrial control systems
• High-frequency signal processing applications

Note: The part is obsolete and non-RoHS compliant, which may limit its availability and suitability for new designs.