ON Semiconductor 2SK669-AC

Product Description:

The 2SK669-AC is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rochester Electronics, LLC. It is a discrete semiconductor product designed for use in electronic circuits. This device is a single MOSFET with a through-hole mounting type and a 3-SIP package.

Features:

• N-Channel MOSFET with a maximum continuous drain current of 100mA at 25°C
• Drain-to-source voltage rating of 50V
• Input capacitance of 15pF maximum at 10V
• Power dissipation of 200mW maximum
• Rds(on) of 20Ohm maximum at 10mA and 10V
• Operating temperature range of -40°C to 125°C
• Moisture sensitivity level of 1 (unlimited)
• RoHS3 compliant

Application Grade:

The 2SK669-AC is designed for general-purpose applications, making it suitable for a wide range of electronic circuits. Its N-Channel MOSFET configuration and moderate power dissipation make it suitable for use in low-power applications such as signal amplification, switching, and level shifting.

Applications:

• Signal amplification and switching
• Level shifting and isolation
• Low-power applications such as audio amplifiers, power supplies, and motor control circuits
• General-purpose electronic circuits requiring a N-Channel MOSFET with moderate power dissipation and voltage rating.