ON Semiconductor BUV26

Product Brief Description:

The BUV26 is a NPN bipolar junction transistor (BJT) manufactured by Rochester Electronics, LLC. It is a single-element, through-hole mounted transistor designed for switching applications. The transistor is non-RoHS compliant and has a maximum power rating of 85W.

Features:

• NPN transistor type
• Silicon element material
• Maximum collector-emitter breakdown voltage: 90V
• Maximum collector current: 10A
• Maximum collector-emitter saturation voltage: 1.5V at 1.2A, 12A
• Operating temperature: 175°C (TJ)
• Peak reflow temperature: 260°C
• Moisture sensitivity level (MSL): 1 (unlimited)
• JESD-609 code: e3
• JESD-30 code: R-PSFM-T3
• JEDEC-95 code: TO-220AB
• RoHS status: Non-RoHS compliant
• Pbfree code: yes

Application Grade:

The BUV26 is designed for commercial applications and is suitable for switching applications.

Applications:

• Switching applications
• Power amplifiers
• Power supplies
• Motor control
• Industrial control systems
• Automotive electronics
• Aerospace and defense electronics

Key Information:

• Part number: BUV26
• Manufacturer: Rochester Electronics, LLC
• Transistor type: NPN
• Element material: Silicon
• Maximum collector-emitter breakdown voltage: 90V
• Maximum collector current: 10A
• Maximum collector-emitter saturation voltage: 1.5V at 1.2A, 12A
• Operating temperature: 175°C (TJ)
• Peak reflow temperature: 260°C
• Moisture sensitivity level (MSL): 1 (unlimited)
• RoHS status: Non-RoHS compliant
• Pbfree code: yes
• Packaging: Tube
• Package / Case: TO-220-3
• Mounting type: Through hole
• Configuration: Single
• Case connection: Collector