Solid State Manufacturing 2N4236

Brief Description: The 2N4236 is a NPN bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is a single-element transistor with a through-hole mounting type and a TO-205AD or TO-39-3 metal can package.

Features:

• Collector-base voltage (VCBO): 80V
• Collector-emitter breakdown voltage: 80V
• Collector-emitter voltage (VCEO): 80V
• Maximum collector current (Ic): 1A
• Maximum collector cutoff current: 1mA
• DC current gain (hFE) at Ic, Vce: 30 at 250mA, 1V
• Emitter-base voltage (VEBO): 7V
• Maximum operating temperature: 200°C
• Maximum power dissipation: 1W
• Minimum operating temperature: -65°C
• Radiation hardening: No
• RoHS compliant: No

Application Grade: The 2N4236 is a general-purpose transistor suitable for a wide range of applications, including audio amplifiers, power supplies, and low-power switching circuits.

Applications:

• Audio amplifiers
• Power supplies
• Low-power switching circuits
• General-purpose switching and amplification applications

Overall, the 2N4236 is a reliable and versatile transistor that can be used in a variety of applications where a NPN bipolar junction transistor is required. Its high collector current and power dissipation capabilities make it suitable for use in medium-power applications.