Ampleon BLF989

Brief Description: The BLF989 is a dual common-source LDMOS (Lateral Double-Diffused MOSFET) RF power MOSFET from Ampleon, designed for high-power RF applications. It operates in the enhancement mode and features a high power gain, high frequency, and high efficiency.

Features:

• High power gain: 22.5 dB
• High frequency: 860 MHz (maximum), 400 MHz (minimum)
• High efficiency: 35% drain efficiency
• High power output: 135 W (minimum)
• Low input capacitance: 368 pF (typical)
• Low reverse transfer capacitance: 0.86 pF (typical)
• Low output capacitance: 69 pF (typical)
• High maximum operating temperature: 225°C
• High minimum operating temperature: -65°C
• Low maximum drain-source resistance: 90 mOhm (typical)

Application Grade: The BLF989 is designed for high-power RF applications, such as DVB-T OFDM (Digital Video Broadcasting - Terrestrial, Orthogonal Frequency Division Multiplexing) and Class AB amplifiers.

Applications:

• RF power amplifiers for DVB-T OFDM applications
• Class AB amplifiers for high-power RF applications
• High-frequency RF power amplifiers for wireless communication systems
• High-power RF amplifiers for satellite communication systems

Overall, the BLF989 is a high-performance RF power MOSFET designed for high-power RF applications, offering high power gain, high frequency, and high efficiency. Its dual common-source configuration and enhancement mode operation make it suitable for a wide range of RF power amplifier applications.