STMicroelectronics STD1805T4

Brief Description: The STD1805T4 is a surface-mount NPN bipolar junction transistor (BJT) from STMicroelectronics. It is a single-element transistor with a collector-emitter voltage of 60V and a collector-base voltage of 150V. The transistor has a maximum power dissipation of 15W and a maximum collector current of 5A.

Features: - Collector-emitter breakdown voltage: 60V - Collector-base voltage: 150V - Maximum collector current: 5A - Maximum power dissipation: 15W - DC current gain (hFE): 200 (minimum) at 100mA and 2V - Frequency: 150MHz - Gain bandwidth product: 150MHz - Operating temperature: 150°C (TJ) - Package: TO-252-3 (DPak) with 3 pins - Lead-free: Yes - RoHS compliant: Yes - Radiation hardening: No - Transistor application: Switching

Application Grade: The STD1805T4 is designed for switching applications, making it suitable for use in power supplies, motor control, and other high-power applications.

Applications: - Power supplies - Motor control - High-power switching circuits - Industrial automation - Automotive applications - Aerospace and defense applications

Key Information: - Collector-emitter voltage: 60V - Collector-base voltage: 150V - Maximum collector current: 5A - Maximum power dissipation: 15W - DC current gain (hFE): 200 (minimum) at 100mA and 2V - Frequency: 150MHz - Gain bandwidth product: 150MHz - Operating temperature: 150°C (TJ) - Package: TO-252-3 (DPak) with 3 pins - Lead-free: Yes - RoHS compliant: Yes - Radiation hardening: No