STMicroelectronics STBV45

Brief Description: The STBV45 is a NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It has a collector-emitter breakdown voltage of 400V and a maximum collector current of 750mA.

Features:

• Collector-emitter breakdown voltage: 400V
• Collector-emitter voltage (VCEO): 400V
• Current rating: 750mA
• DC current gain (hFE) (min): 5 @ 400mA, 5V
• Maximum power dissipation: 950mW
• Operating temperature: 150°C (TJ)
• Package: TO-226-3, TO-92-3 (TO-226AA)
• Mounting type: Through-hole
• Lead-free: Yes
• RoHS compliant: Yes (ROHS3)

Application Grade: The STBV45 is designed for general-purpose switching applications, making it suitable for a wide range of applications.

Applications:

• Switching circuits
• Power supplies
• Motor control
• Lighting control
• Industrial automation
• Consumer electronics

Key Information:

• Collector-emitter breakdown voltage: 400V
• Collector-emitter voltage (VCEO): 400V
• Current rating: 750mA
• DC current gain (hFE) (min): 5 @ 400mA, 5V
• Maximum power dissipation: 950mW
• Operating temperature: 150°C (TJ)
• Package: TO-226-3, TO-92-3 (TO-226AA)
• Mounting type: Through-hole
• Lead-free: Yes
• RoHS compliant: Yes (ROHS3)

Overall, the STBV45 is a reliable and versatile NPN BJT transistor suitable for a wide range of switching applications. Its high breakdown voltage and current rating make it suitable for high-power applications, while its through-hole mounting type and lead-free construction make it easy to integrate into a variety of electronic systems.