ON Semiconductor EC4H09C-TL-H

Brief Description: The EC4H09C-TL-H is a surface-mount NPN bipolar junction transistor (BJT) designed for RF applications. It features a high current gain and low noise figure, making it suitable for a range of high-frequency applications.

Features:

• High current gain (hFE) of 70 at 5mA and 1V
• Maximum current collector (Ic) of 40mA
• Frequency transition of 26GHz
• Gain of 15dB
• Low noise figure of 1.3dB at 2GHz
• Operating temperature range of -40°C to 150°C (TJ)
• Maximum power dissipation of 120mW
• RoHS3 compliant
• Moisture Sensitivity Level (MSL) of 1 (unlimited)

Application Grade: The EC4H09C-TL-H is designed for high-frequency RF applications, such as:

• Wireless communication systems
• Radar and satellite communications
• High-speed data transmission
• Low-noise amplifiers

Applications:

• RF amplifiers
• Mixers and multipliers
• Oscillators and frequency synthesizers
• Low-noise amplifiers
• High-speed data transmission systems
• Wireless communication systems

Key Information:

• Transistor type: NPN
• Package type: 4-UFDFN (surface mount)
• Packaging: Tape & Reel (TR)
• Supplier device package: 4-ECSP1008
• Operating temperature range: -40°C to 150°C (TJ)
• Maximum power dissipation: 120mW
• RoHS3 compliant
• MSL: 1 (unlimited)

Overall, the EC4H09C-TL-H is a high-performance NPN BJT designed for high-frequency RF applications, offering a combination of high current gain, low noise figure, and high operating temperature.