Phone

    00852-6915 1330

BLF188XR Power LDMOS transistor:Datasheet,Features,Pinout [Video&FAQ]

  • Contents

Catalog

Product Overview

BLF188XR Pin Configuration

BLF188XR Features

BLF188XR Applications

BLF188XR Datasheet

Product Attributes

BLF188XR Manufacturer

Using Warning

BLF188XR FAQ

 

Product Overview

 

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

 

Test signal f (MHz) VDS (V) PL (W) GP (dB) ηD (%)
CW 2 to 30 50 1270 29 0.75
27 50 1400 23.7 73
41 50 1200 22 82
60 48 1240 22 77
72.5 50 1350 23.1 83
81.4 50 1200 27.1 77.8
88 to 108 50 1320 22.5 85
108 50 1200 26.5 83
200 50 1288 19.3 68.3
pulsed RF 81.4 50 1200 25.8 85
81.4 50 1400 25.4 81
108 50 1400 24 73
DVB-T 174 to 230 50 225 23.8 29

 

BLF188XR Pin Configuration

Simplified-outlineSimplified-outline

Figure: Simplified outline

 

Graphic-symbol

Figure:Graphic symbol

Pin1: drain1
Pin2: drain2
Pin3: gate1
Pin4: gate2
Pin5: source

BLF188XR Features

  • Easy power control 
  • Integrated ESD protection 
  • Excellent ruggedness 
  • High efficiency 
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz) 
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

 

BLF188XR Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

 

BLF188XR Datasheet

You can download the datasheet from the link given below:

Datasheet

 

Product Attributes

 

Product Attribute Attribute Value
EU RoHS Compliant
ECCN (US) EAR99
Part Status NRND
Automotive Unknown
PPAP Unknown
Configuration Dual Common Source
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 2
Mode of Operation Pulsed RF
Process Technology LDMOS
Maximum Drain Source Voltage (V) 135
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.25
Maximum VSWR 65
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) 70(Typ)@6V
Typical Input Capacitance @ Vds (pF) 534@50V
Typical Reverse Transfer Capacitance @ Vds (pF) 5.5@50V
Typical Output Capacitance @ Vds (pF) 212@50V
Output Power (W) 1400
Typical Power Gain (dB) 24.4
Maximum Frequency (MHz) 600
Minimum Frequency (MHz) 10
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package SOT-539A
Pin Count 5
Mounting Screw
Package Height 4.7(Max)
Package Length 41.28(Max)
Package Width 10.29(Max)
PCB changed 5

 

BLF188XR Manufacturer

Created in 2015, Ampleon is shaped by 50 years of RF Power leadership and is set to exploit the full potential of data and energy transfer in RF. Ampleon has more than 1,650 employees worldwide, dedicated to creating optimal value for customers. Its innovative, yet consistent portfolio offers products and solutions for a wide range of applications, such as mobile broadband infrastructure, radio & TV broadcasting, CO2 lasers & plasma, MRI, particle accelerators, radar & air-traffic control, non-cellular communications, RF cooking & defrosting, RF heating and plasma lighting.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

BLF188XR FAQ

What is LDMOS transistor?

LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers.

 

What is RF LDMOS?

RF laterally diffused MOS (LDMOS) is currently the dominant device technology used in high-power RF power amplifier (PA) applications for frequencies ranging from 1 MHz to greater than 3.5 GHz. The LDMOS device structure is highly flexible.

 

How does LDMOS work?

LDMOS channel current is controlled by the vertical electric field induced by the gate and the lateral field that exists between the source and drain. The depletion region between the source and drain is dependent on the junction doping profiles.

 

PCB Symbol, Footprint & 3D Model

 

Get a quote

Quantity:

Click To Quote

Kynix

Kynix was founded in 2008, specializing in the electronic components distribution business. We adhere to honesty and ethics as our business philosophy and have gradually established an excellent reputation and credibility in our international business. With the accurate quotation, excellent credit, reasonable price, reliable quality, fast delivery, and authentic service, we have won the praise of the majority of customers.

Join our mailing list!

Be the first to know about new products, special offers, and more.

Leave a Reply

We'd love to hear from you! Feel free to share your thoughts and comments below. Rest assured, your email address will remain private.

Name *
Email *
Captcha *
Rating:

Kynix

  • How to purchase

  • Order
  • Search & Inquiry
  • Shipping & Tracking
  • Payment Methods
  • Contact Us

  • Tel: 00852-6915 1330
  • Email: info@kynix.com
  • Follow Us

authentication