Si4666DY-T1-GE3

Attribute	Attribute Value
Manufacturer:	VISHAY
Product Category:	FETs - Single
Packaging:	Alternate Packaging
Series:	TrenchFETR
FET-Type:	MOSFET N-Channel, Metal Oxide
FET-Feature:	Standard
Drain-to-Source-Voltage-Vdss:	25V
Current-Continuous-Drain-Id-25°C:	16.5A (Tc)
Rds-On-Max-Id-Vgs:	10 mOhm @ 10A, 10V
Vgs-th-Max-Id:	1.5V @ 250μA
Gate-Charge-Qg-Vgs:	34nC @ 10V
Input-Capacitance-Ciss-Vds:	1145pF @ 10V
Power-Max:	5W
Operating-Temperature:	-55°C ~ 150°C (TJ)
Mounting-Type:	Surface Mount
Package-Case:	8-SOIC (0.154", 3.90mm Width)
Supplier-Device-Package:	8-SO
Mounting-Style:	SMD/SMT
Number-of-Channels:	1 Channel
Transistor-Polarity:	N-Channel
Vds-Drain-Source-Breakdown-Voltage:	25 V
Id-Continuous-Drain-Current:	16.5 A
Rds-On-Drain-Source-Resistance:	10 mOhms
Vgs-Gate-Source-Voltage:	12 V
Maximum-Operating-Temperature:	+ 150 C
Technology:	Si
Minimum-Operating-Temperature:	- 55 C
Pd-Power-Dissipation:	5 W
Transistor-Type:	1 N-Channel
Part-Aliases:	SI4666DY-GE3
Unit-Weight:	0.017870 oz
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Part Number	Mfr.	Package	Qty	Description	Details
Part Number:SI4668DY-T1-GE3	Mfr:Vishay / Siliconix	Package:	Qty:0	Description:MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
Part Number:SI4662DY-T1-GE3	Mfr:Vishay / Siliconix	Package:	Qty:0	Description:MOSFET 30V 18.6A 6.25W 10mohm @ 10V

Stock: 9,254 Can Ship Immediately

Unit Price:$0.78440

SubTotal: $0.78440

Minimum: 1 Multiples: 1

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