SISS23DN-T1-GE3


SISS23DN-T1-GE3
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Kynix Part #:KY56-SISS23DN-T1-GE3
Manufacturer Part #:SISS23DN-T1-GE3
Product Category: FETs - Single
Manufacturer:
Description:MOSFET P-CH 20V 50A PPAK 1212-8S
Package:
Quantity: 6387 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Lead Time: 3(168 Hours)
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Specifications
Attribute Attribute Value
Manufacturer:
Product Category: FETs - Single
Packaging: Alternate Packaging
Series: TrenchFETR
FET-Type: MOSFET P-Channel, Metal Oxide
FET-Feature: Standard
Drain-to-Source-Voltage-Vdss: 20V
Current-Continuous-Drain-Id-25°C: 50A (Tc)
Rds-On-Max-Id-Vgs: 4.5 mOhm @ 20A, 4.5V
Vgs-th-Max-Id: 900mV @ 250μA
Gate-Charge-Qg-Vgs: 300nC @ 10V
Input-Capacitance-Ciss-Vds: 8840pF @ 15V
Power-Max: 57W
Operating-Temperature: -50°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Package-Case: 8-VDFN Exposed Pad
Supplier-Device-Package: PowerPAKR 1212-8S
Mounting-Style: SMD/SMT
Number-of-Channels: 1 Channel
Transistor-Polarity: P-Channel
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Id-Continuous-Drain-Current: - 50 A
Rds-On-Drain-Source-Resistance: 4.5 mOhms
Vgs-Gate-Source-Voltage: 8 V
Vgs-th-Gate-Source-Threshold-Voltage: - 0.4 V to - 0.9 V
Qg-Gate-Charge: 93 nC
Maximum-Operating-Temperature: + 150 C
Technology: Si
Channel-Mode: Enhancement
Configuration: Single
Fall-Time: 50 ns
Forward-Transconductance-Min: 44 S
Minimum-Operating-Temperature: - 55 C
Pd-Power-Dissipation: 57 W
Rise-Time: 50 ns
Tradename: TrenchFET Power MOSFET
Transistor-Type: 1 P-Channel
Typical-Turn-Off-Delay-Time: 140 ns
Typical-Turn-On-Delay-Time: 45 ns
Descriptions
P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK? 1212-8S (3.3x3.3)
Digi-Key
Trans MOSFET P-CH 20V 27A 8-Pin PowerPAK 1212-S T/R
Arrow
MOSFET -20V 4.5mOhm@4.5V -50A P-Ch G-III
Mouser
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Stock: 6,387 Can Ship Immediately
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Package

Step1Product
Step2Casing drivepipe
Step3Anti-static bag
Step4Packaging boxes
Step5Bar-code shipping tag

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