DMN1019USN-13
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Kynix Part #: KY56-DMN1019USN-13
Manufacturer Part#:

DMN1019USN-13

Product Category: FETs - Single
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 12V 9.3A SC59
  datasheetDMN1019USN-13 Datasheet
Package:
Quantity: 16121 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Diodes Incorporated
Product Category: FETs - Single
Series: DMN10
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.000282 oz
Mounting-Style: SMD/SMT
Package-Case: TO-236-3, SC-59, SOT-23-3
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: SC-59
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 680mW
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 2426pF @ 10V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 9.3A (Ta)
Rds-On-Max-Id-Vgs: 10 mOhm @ 9.7A, 4.5V
Vgs-th-Max-Id: 800mV @ 250μA
Gate-Charge-Qg-Vgs: 50.6nC @ 8V
Pd-Power-Dissipation: 1.2 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 16.8 ns
Rise-Time: 57.6 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 9.3 A
Vds-Drain-Source-Breakdown-Voltage: 12 V
Vgs-th-Gate-Source-Threshold-Voltage: 0.53 V
Rds-On-Drain-Source-Resistance: 41 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 22.2 ns
Typical-Turn-On-Delay-Time: 7.6 ns
Qg-Gate-Charge: 50.6 nC
Channel-Mode: Enhancement

Descriptions

N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59
Digi-Key
Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
Arrow
MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
Mouser

Alternate Names

DIODES INCORPORATED
DIODE
DII
DIO
DIODE INC
DC COMPONENTS
DIOD
YENYO
MICRO COM
Diodes Zetex
MICRO ELECTRONIC INS
DIODE INCORPORATED
DIODES ZET
DIODSE
DINC
DIOINC
FORMOSA MS
DIODES INC/VISHAY
ZETEXDIODES
DIODES INC/VISH
LITE-ON Semiconductor Corp
ZETEX
DIODES INC (VA)
Diodes-Inc-Zetex
ZETEX (DIODES INC)
Search Part number : "DMN10" Included word is 15
Part Number Manufacturer Package Quantity Description
DMN1016UCB6-7 Diodes Incorporated 15000 MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
DMN1019USN-7 Diodes Incorporated 6017 MOSFET N-CH 12V 9.3A SC59
DMN1019UVT-13 Diodes Incorporated 0 MOSFET 12V Enh Mode FET
DMN1019UVT-7 Diodes Incorporated 2270 MOSFET 12V Enh Mode FET
DMN1025UFDB-7 Diodes Incorporated 1790 MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
DMN1032UCB4-7 Diodes Incorporated 2080 MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W
DMN1045UFR4-7 Diodes Incorporated 2889 MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss
DMN10H099SFG-13 Diodes Incorporated 0 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG-7 Diodes Incorporated 2000 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SK3-13 Diodes Incorporated 583 MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H100SK3-13 Diodes Incorporated 2345 MOSFET 100V N-Ch Enh FET 100mOhm 3V
DMN10H120SE-13 Diodes Incorporated 2708 MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
DMN10H120SFG-13 Diodes Incorporated 3000 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG-7 Diodes Incorporated 10000 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H170SFDE-13 Diodes Incorporated 0 MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W
DMN1019USN-13 RELATED PRODUCT PICTURE
left
  • DMN1016UCB6-7
  • DMN1019USN-7
  • DMN1019UVT-13
  • DMN1019UVT-7
  • DMN1025UFDB-7
  • DMN1032UCB4-7
  • DMN1045UFR4-7
  • DMN10H099SFG-13
  • DMN10H099SFG-7
  • DMN10H099SK3-13
  • DMN10H100SK3-13
  • DMN10H120SE-13
  • DMN10H120SFG-13
  • DMN10H120SFG-7
  • DMN10H170SFDE-13
right
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