Aptina FGA60N65SMD

Brief Description: The FGA60N65SMD is a high-power, N-channel, Field-Stop IGBT (Insulated-Gate Bipolar Transistor) from ON Semiconductor. It is designed for power control applications and features a low conduction loss.

Features:

• High power rating: 600W
• High voltage rating: 650V
• High current rating: 120A
• Low conduction loss
• Field-Stop IGBT technology for improved switching performance
• Low gate drive requirements
• RoHS3 compliant
• Lead-free

Application Grade: The FGA60N65SMD is designed for high-power, high-voltage applications such as:

• Power supplies
• Motor control
• Power conversion
• Renewable energy systems

Applications:

• Power control and conversion
• Motor control and drives
• Power supplies and inverters
• Renewable energy systems and solar power applications
• Industrial automation and control systems

Key Specifications:

• Voltage: 650V
• Current: 120A
• Power: 600W
• Switching times: 18ns (turn-on), 104ns (turn-off)
• Switching energy: 1.54mJ (on), 450μJ (off)
• Gate charge: 189nC
• Collector-emitter saturation voltage: 1.9V
• Collector-emitter breakdown voltage: 650V

Package and Mounting:

• Package: TO-3P-3, SC-65-3
• Mounting type: Through-hole
• Mount: Through-hole
• Moisture sensitivity level: 1 (unlimited)

Operating Conditions:

• Operating temperature: -55°C to 175°C (TJ)
• Storage temperature: -65°C to 150°C
• Humidity: 5% to 95% RH, non-condensing

Additional Information:

• Lifecycle status: Active
• Factory lead time: 7 weeks
• Radiation hardening: No
• ECCN code: EAR99
• HTS code: 8541.29.00.95
• JESD-609 code: e3