MRFE6VP6300HR5


MRFE6VP6300HR5
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Kynix Part #:KY56-MRFE6VP6300HR5
Manufacturer Part #:MRFE6VP6300HR5
Product Category: Transistors - FETs, MOSFETs - Single
Manufacturer:Freescale / NXP
Description:RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Package: NI-780-4
Quantity: 830 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Lead Time: 3(168 Hours)
MRFE6VP6300HR5
FREESCA MRFE6VP6300HR5 RF MOSFET Transistors VHV6 300W50VISM NI780H-4 $76.32979
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Specifications
Attribute Attribute Value
Manufacturer: Freescale / NXP
Product Category: Transistors - FETs, MOSFETs - Single
Transistor-Polarity: N-Channel
Id-Continuous-Drain-Current: 100 mA
Vds-Drain-Source-Breakdown-Voltage: 130 V
Technology: Si
Gain: 26.6 dB at 230 MHz
Output-Power: 300 W at Peak
Maximum-Operating-Temperature: + 150 C
Mounting-Style: SMD/SMT
Package-Case: NI-780-4
Packaging: Reel
Minimum-Operating-Temperature: - 65 C
Operating-Frequency: 1.8 MHz to 600 MHz
Pd-Power-Dissipation: 1050 W
Series: MRFE6VP6300H
Type: RF Power MOSFET
Vgs-Gate-Source-Voltage: 10 V
Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V
Unit-Weight: 0.225605 oz
Features, Applications

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ 100 mA


Signal Type Pulsed (100 sec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 74.0 80.0 IRL (dB) --16 --15


1.8-600 MHz, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles 300 Watts CW Output Power 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 sec Capable of 300 Watts CW Operation Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended in a Push--Pull Configuration Qualified to a Maximum of 50 VDD Operation Characterized from 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters RoHS Compliant NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14. Table 1. Maximum Ratings


Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Total Device Dissipation = 25°C Derate above 25°C Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg PD TJ Value to Unit Vdc °C W W/°C °C


Characteristic Thermal Resistance, Junction to Case (4) Pulsed: Case Temperature 300 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 100 mA, 230 MHz CW: Case Temperature 300 W CW, 50 Vdc, IDQ = 1100 mA, 230 MHz Symbol Value (2,3) Unit °C/W ZJC RJC 0.05 0.19


1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes AN1955. 4. Same test circuit is used for both pulsed and CW.


Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum)


Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, = 50 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, = 480 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, = 1 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)


Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout 300 W Peak (60 W Avg.), = 230 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss VSWR 65:1 at all Phase Angles Pulsed: Pout 300 W Peak (60 W Avg.), = 230 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle CW: Pout 300 W Avg., = 130 MHz 1. Each side of device measured separately. Gps D IRL % dB


Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ mA No Degradation in Output Power


x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.220 Microstrip x 0.220 Microstrip x 0.220 Microstrip x 0.630 Microstrip


Note: Same test circuit is used for both pulsed and CW.

Table 5. MRFE6VP6300HR3(HSR3) Test Circuit Component Designations and Values

Part L2 R1 PCB Description 15 pF Chip Capacitors 82 pF Chip Capacitor 91 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 50 V Chip Capacitor 100 V Chip Capacitor 35 V Tantalum Capacitor 100 V Chip Capacitor 100 V Chip Capacitor 100 V Chip Capacitor 100 V Electolytic Capacitors 18 pF Chip Capacitors 120 nH Inductor 17.5 nH Inductor 1/2 W Chip Resistor = 2.55 Part Number CRCW20101K00FKEF AD255A Manufacturer ATC AVX Taiyo Yuden Kemet ATC Kemet Multicomp ATC Coilcraft Vishay Arlon


Descriptions
RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4
Digi-Key
Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R
Arrow
RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Mouser
Alternate Names
FREESCA has several brands around the world that may alttemate names for MRFE6VP6300HR5 due to regional differences or acquisition.
MRFE6VP6300HR5 may also be known as the dollowing names:
  • FREESCALE
  • FREESCAL
  • FREE
  • FSL
  • FREESC
  • FRS
  • FREESCALE SEMI
  • FRE
  • FREESCALE SEMICONDUCTOR INC
  • FREESCALE SEMICONDUC
  • FREESCALE-PB
  • FREESCALES
  • FREESCALE SEMIC
  • FRESSCAL
  • FREESCALE/PBF
  • FREESCA
  • FRS/MOT
  • FREESCALE SEMICONDUCTORS
  • FREESCALE SEMICOND
  • Motorola (Freescale)
  • FREESCALE SEMICON
  • FREESCALE-ROHS
  • FREESCALE SEMICONDUCTOR HONG
  • Freescale Semiconductor - NXP
  • FREESCALE-PBFREE
Search Part Number:MRFE6 Included word is 15
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Part Number:MRFE6S9046NR1 Mfr:FREESCAL Package:MODULE Qty:530 Description:
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Part Number:MRFE6S9160HS Mfr: Package:MODULE Qty:580 Description:
Part Number:MRFE6S9200HS Mfr:FREESCAL Package:MODULE Qty:630 Description:
Part Number:MRFE6S9130HR3 Mfr:Freescale / NXP Package:SMD Qty:830 Description:
Part Number:MRFE6S9200H Mfr:Freescale / NXP Package:MODULE Qty:830 Description:
Part Number:MRFE6S9125NR1 Mfr:FSL Package:MODULE Qty:830 Description:
MRFE6VP6300HR5 Related Product Picture
  • MRFE6VP5600H
  • MRFE6VP61K25HR5
  • MRFE6S9160H
  • MRFE6S9046GN
  • MRFE6S9201HSR3
  • MRFE6S9130H
  • MRFE6S9205HS
  • MRFE6S9135HS
  • MRFE6S9046NR1
  • MRFE6S9125NB
  • MRFE6S9160HS
  • MRFE6S9200HS
  • MRFE6S9130HR3
  • MRFE6S9200H
  • MRFE6S9125NR1
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Stock: 830 Can Ship Immediately
Unit Price:$96.36460
Qty. Unit Price
1+: $96.36460
10+: $90.91000
100+: $85.76415
500+: $80.90958
1000+: $76.32979
SubTotal: $96.36460
Minimum: 1 Multiples: 1
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