MRF7S19100NBR1
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Kynix Part #: KY32-MRF7S19100NBR1
Manufacturer Part#:

MRF7S19100NBR1

Product Category: IC Chips
Manufacturer: FREESCALE
Description:
  datasheetMRF7S19100NBR1 Datasheet
Package: TO270A
Quantity: 3144 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
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Manufacturer: FREESCALE
Product Category: IC Chips
Features, Applications


Designed for CDMA base station applications with frequencies from to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR @ 0.01% Probability on CCDF. Power Gain 17.5 dB Drain Efficiency 30% Device Output Signal PAR @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset - 38 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power Pout 1 dB Compression Point W CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Designed for Digital Predistortion Error Correction Systems 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


- 1990 MHz, 29 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs

Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value 150 225 Unit Vdc °C


Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.57 0.68 Unit °C/W


1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.


Test Methodology Human Body Model (per - A114) Machine Model (per - A115) Charge Device Model (per - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)


Test Methodology Per JESD - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C


Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, = 320 Adc) Gate Quiescent Voltage (1) (VDD = 28 Vdc, = 1000 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, = 3.2 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss 553.5 pF VGS(th) VGS(Q) VDS(on) Vdc IDSS IGSS 1 500 Adc nAdc Symbol Min Typ Max Unit


Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout 29 W Avg., = 1930 MHz, = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL % dB dBc dB


1. VGG 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)


Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Video Bandwidth 100 W PEP Pout where - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 @ VBW frequency @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout 29 W Avg. Average Group Delay @ Pout 100 W CW, = 1960 MHz Part to - Part Insertion Phase Variation @ Pout 100 W CW, = 1960 MHz, Six Sigma Window Gain Variation over Temperature to +85°C) Output Power Variation over Temperature to +85°C) Symbol VBW 30 Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 1000 mA, - 1990 MHz Bandwidth

Descriptions

RF Mosfet LDMOS 28V 1A 1.93GHz ~ 1.99GHz 17.5dB 29W TO-272 WB-4
Digi-Key

Alternate Names

FREESCALE
FREESCAL
FREE
FSL
FREESC
FRS
FREESCALE SEMI
FRE
FREESCALE SEMICONDUCTOR INC
FREESCALE SEMICONDUC
FREESCALE-PB
FREESCALES
FREESCALE SEMIC
FRESSCAL
FREESCALE/PBF
FREESCA
FRS/MOT
FREESCALE SEMICONDUCTORS
FREESCALE SEMICOND
Motorola (Freescale)
FREESCALE SEMICON
FREESCALE-ROHS
FREESCALE SEMICONDUCTOR HONG
Freescale Semiconductor - NXP
FREESCALE-PBFREE
Search Part number : "MRF7S" Included word is 15
Part Number Manufacturer Package Quantity Description
MRF7S19120NR1 FREESCALE TO-270 830
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MRF7S38075H FSL MODULE 70
MRF7S38010HS Freescalse MODULE 74
MRF7S18125AHS FREESCAL MODULE 78
MRF7S21210H Freecale MODULE 81
MRF7S19170HS FREESCALE MODULE 95
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MRF7S19100NBR1 RELATED PRODUCT PICTURE
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