emi Related Articles

CatalogI IntroductionII What is Infrared?III Theoretical Principle of Infrared Temperature MeasurementIV The Principle of Infrared ThermometerV Differences in Accuracy of Different Types of Infrared Thermometers  5.1 Three Categories of Infrared Thermometers  5.2 Differences Between Mainstream Infrared Thermometers  5.3 Infrared Temperature GunVI Infrared Thermometer Accuracy And Factors Affecting Accuracy  6.1 Precision of Infrared Thermometer  6.2 Factors Affecting The Accuracy of The Infrared Thermometer MeasurementVII Factors to Consider When Choosing An Infrared ThermometerVIII How To Make Infrared Thermometers More AccurateIX One Question Related to Infrared Thermometers  9.1 Question  9.2 AnswerX FAQI IntroductionIn the past two months, due to the outbreak of Coronavirus Disease 2019 (COVID-19), output of infrared thermometers exceeded the whole year of last year, driving the shipments and demand for chips such as sensors, MCUs, and operational amplifiers. Infrared thermometer is a non-contact diagnostic technology that can scan and image the thermal radiation of objects and display data. It has the advantages of wide measurement range, fast temperature measurement, high accuracy and high sensitivity. With the widespread use of infrared thermometers, some users have doubts about its working principle and accuracy. This article will introduce how the infrared thermometer works, and explain its accuracy and the factors that affect it.Figure1. Infrared ThermometerII What is Infrared?Infrared is an electromagnetic wave with a wavelength between microwave and visible light. The wavelength is between 1mm and 760 nanometers (nm), which is invisible light longer than red light. Anything above absolute zero (-273.15°C) can generate infrared rays. Modern physics calls it heat rays. Medical infrared can be divided into 2 categories: near infrared and far infrared. Containing thermal energy, the sun's heat is mainly transmitted to the earth through infrared rays. Infrared is a part of the many invisible rays of the sun's rays. It was discovered by British scientist Herschel in 1800 and is also called infrared thermal radiation. It has a strong thermal effect. He split the sunlight with a prism, and placed thermometers on the ribbons of various colors in an attempt to measure the heating effect of light of various colors. It was found that the thermometer located outside the red light warmed the fastest.  Therefore, it is concluded that in the solar spectrum, there must be invisible light outside the red light, which is infrared. Can also serve as a medium of transmission. The wavelength of infrared light in the solar spectrum is greater than visible light, with a wavelength of 0.75 to 1000 μm. Infrared can be divided into three parts, namely near infrared, with a wavelength between (0.75-1) to (2.5-3) μm; mid-infrared, with a wavelength between (2.5-3) to (25-40) μm; far infrared , The wavelength is between (25-40) ~ l500μm.Figure2. InfraredIII Theoretical Principle of Infrared Temperature MeasurementIn nature, when the temperature of an object is higher than absolute zero, due to the existence of internal thermal movement, it will continuously radiate electromagnetic waves to the surroundings, including infrared rays with a wavelength range of 0.75µm ~ 100µm. Its biggest feature is that at a given temperature and wavelength, the radiant energy emitted by an object has a maximum value.  This substance is called a black body, and its reflection coefficient is set to 1; the reflection coefficient of other substances is less than 1, and is called gray body. Because the black body's spectral radiant power P (λT) meets Planck's law between the absolute temperature T, it shows that at the absolute temperature T, the radiant power of the black body per unit area at the wavelength λ is P (λT). According to this relationship, the relationship curve can be obtained as shown in the figure below: (1) As the temperature increases, the stronger the radiant energy of the object. This is the basis of the theory of infrared radiation and the design basis of a single-band infrared thermometer. (2) As the temperature rises, the radiation peak shifts to the short-wave direction (to the left) and satisfies the Wien shift theorem. The wavelength at the peak is inversely proportional to the absolute temperature T, and the blue curve is the line connecting the peaks. This formula tells us why the high temperature thermometer works mostly in the short wave and the low temperature thermometer works mostly in the long wave. (3) The rate of change of radiant energy with temperature is larger at the short wave than at the long wave, that is, the thermometer working at the short wave has a relatively high signal-to-noise ratio (high sensitivity) and strong anti-interference. This is particularly important at wavelengths, especially for small targets at low temperatures.Figure3. Planck's Law of Blackbody RadiationIV The Working Principle of Infrared ThermometerThe infrared thermometer consists of the optical system, photodetector, signal amplifier, signal processing and display output. The radiation of the measured object and the feedback source is adjusted according to the modulator and input to the infrared detector. The difference between the two signals is amplified by the inverse amplifier and the temperature of the feedback source is controlled so that the spectral radiance of the feedback source is the same as that of the object. The display indicates the brightness temperature of the object being measured.How does an Infrared Thermometer work?V Differences in Accuracy of Different Types of Infrared Thermometers5.1 Three Categories of Infrared ThermometersAccording to different uses and accuracy, infrared thermometers can be roughly divided into medical-grade infrared thermometers, consumer-grade infrared thermometers, and industrial-grade infrared thermometers. Strictly divided, medical-grade infrared thermometers have the highest accuracy requirements. The accuracy needs to be between 0.1 and 0.2 degrees. High-precision infrared ear thermometers can meet the medical-grade temperature standards. However, to avoid cross-infection, hospitals use ear thermometers. One-time sheath is needed for warm guns; consumer grades are next, and accuracy around 0.5 can meet our daily temperature measurement needs. The accuracy is about 0.3 degrees, which belongs to the consumer-grade infrared thermometer; the industrial grade has the lowest, generally the maximum allowable error is more than ± 1 ° C, and the distance is far.5.2 Differences Between Mainstream Infrared ThermometersIn fact, whether it is a medical or industrial infrared thermometer, they use the same principle of receiving infrared waves from the human body, but the object distance ratio has been adjusted differently, and the surface temperature is measured. The normal forehead temperature is about 2-3 ° C lower than the temperature of the armpit, and the forehead is directly affected by the environment. It is for preliminary investigation and reference and cannot be used as a basis for medical diagnosis. In addition, the temperature of the ear and neck will be more stable than the temperature of the forehead and barely affected by the environment. This is one of the reasons why the ear thermometer is more accurate than the forehead.5.3 Infrared Temperature Gun The medical thermometer has been revised by software or the relevant range has been limited by the software before leaving the factory. The emissivity of a normal human body is 0.98 (the thermometer defaults to 0.95), so the measured result is about 34-35 ° C. All infrared products (infrared cameras) can correct the difference by changing the emissivity to 0.8 to avoid inaccurate body temperature when used by non-professionals; and industrial-grade thermometers provide more realistic feedback on temperature measurement. It shows the actual temperature detected.Figure4. Infrared Temperature GunVI Infrared Thermometer Accuracy And Factors Affecting Accuracy6.1 Precision of Infrared ThermometerThe accuracy of contact measurement is about 0.1 degrees. Compared with contact temperature measurement, the accuracy of non-contact temperature measurement is lower. The infrared thermometer with higher accuracy is about 0.2 degrees, and the worse temperature error is 1 degree. Even above 1 degree. In general, the accuracy of infrared thermometers is ± 2 ° C. Today, temperature measurement products such as handheld infrared thermometers on the market are easily affected by measurement distance and ambient temperature, and the measurement error is often around 1 degree.6.2 Factors Affecting The Accuracy of The Infrared Thermometer Measurement6.2.1 EmissivityAll objects reflect, transmit, and emit energy, and only the emitted energy can indicate the object's temperature. When the infrared thermometer measures the surface temperature, the instrument can receive all three kinds of energy. Therefore, all infrared thermometers must be adjusted to read only the emitted energy. Measurement errors are usually caused by infrared energy reflected from other light sources.  Some infrared thermometers can change the emissivity, and emissivity values for many materials can be found in published emissivity tables. Other instruments have a fixed pre-set emissivity of 0.95. The emissivity value is the surface temperature of most organic materials, paints or oxidized surfaces, which is compensated by applying a tape or flat black paint to the measured surface. When the tape or lacquer reaches the same temperature as the base material, measure the temperature of the surface of the tape or lacquer, which is its true temperature.Figure5. Emissivity6.2.2 Ratio of Distance To Light SpotThe optical system of the infrared thermometer collects energy from a circular measurement spot and focuses it on the detector. The optical resolution is defined as the ratio of the distance from the infrared thermometer to the object to the size of the measured spot (D: S). The larger the ratio, the better the resolution of the infrared thermometer and the smaller the spot size to be measured. 6.2.3 Field of ViewMake sure the target is larger than the spot size of the infrared thermometer. The smaller the target, the closer it should be. When accuracy is particularly important, make sure the target is at least 2 times the spot size.Figure6. Field of ViewVII Factors to Consider When Choosing An Infrared Thermometer(1) Temperature rangeThe temperature measurement range is actually the range of the infrared thermometer, and the range of different thermometers will be different. The temperature measurement range is generally -50 ~ 360 ° C, -30 ~ 380 ° C, -18 ~ 280 ° C, -32 ~ 450 ℃, -32 ~ 650 ℃, -32 ~ 1050 ℃, etc., and the range for measuring body temperature is generally 35 ~ 42.5 ℃. You need to choose the appropriate range according to the temperature range of the measured object. (2) Measurement accuracyMeasurement accuracy is the only indicator to ensure the accuracy of the measurement, and it is also a key indicator to determine the performance of the infrared thermometer. Accuracy is usually expressed as ± X ℃ or ± X%. The smaller the value, the higher the accuracy. (3) Display resolutionThe display resolution is the last digit of the temperature display, usually 0.1 ° C or 0.1 ° F. (4) Optical resolutionThe optical resolution is the ratio of the distance D from the thermometer to the target to the diameter S of the measurement spot, that is, the ratio of the distance to the spot diameter D; S, D: S, the greater the accurate temperature measurement distance. In order to obtain accurate temperature readings, the distance between the thermometer and the test target must be within a suitable range. If the pyrometer must be measured away from the target due to environmental conditions, and a small target is to be measured, a pyrometer with high optical resolution should be selected. (5) EmissivityEmissivity is the ratio of the energy radiated by an object at a specific temperature to the energy radiated by an ideal radiator at the same temperature. Different objects have different emissivities. Some infrared thermometers have a fixed emissivity of 0.95, while others are adjustable. The emissivity of the infrared thermometer can be adjusted according to the material of the measured object to ensure the accuracy of the measurement results. (6) Response timeThe response time is the time it takes for the infrared thermometer to reach 95% of its final reading. It represents the speed at which the infrared thermometer responds to changes in the measured temperature. The response time of the new infrared thermometer can even reach 1ms. If the target moves fast or measures a fast-heated target, a fast-responding infrared thermometer should be selected; otherwise, a sufficient signal response cannot be achieved, which will reduce the measurement accuracy.Figure7. Infrared ThermometerVIII How To Make Infrared Thermometers More Accurate(1) Accurately determine the emissivity of the measured object;(2) Avoid the influence of high-temperature objects in the surrounding environment;(3) For transparent materials, the ambient temperature should be lower than the temperature of the measured object;(4) The thermometer should be vertically aligned with the surface of the measured object. Under no circumstances should the angle exceed 30 ° C.(5) Can be applied to the temperature measurement of bright or polished metal surfaces, and cannot be measured through the glass;(6) Correctly follow-off coefficient, the target diameter is full of field of view;(7) If the infrared thermometer is suddenly in a situation where the ambient temperature difference is 20 ° C or higher, the measurement data will be inaccurate, and then take the measured temperature value after the temperature is balanced. IX One Question Related to Infrared Thermometers9.1 QuestionWhat is infrared radiation?A. It's the transfer of energy by electromagnetic wavesB. The radiation given off by radioactive particlesC. Infrared radiation is a type of gasD. It is the reaction that occurs by freezing water9.2 AnswerA X FAQ1. How do you accurately use an infrared thermometer?Keep the Infrared Thermometer Close to the TargetThe Distance-to-spot ratio is the surface area being able to be detected compared to the distance taken from the target. As a rule of thumb, the closer you are to the target, the smaller the measurable surface area is, thus the more accurate the measurement. 2. How does the infrared temperature sensor work?These sensors work by focusing the infrared energy emitted by an object onto one or more photodetectors. These photodetectors convert that energy into an electrical signal, which is proportional to the infrared energy emitted by the object. 3. How accurate are thermal thermometers?Research has shown that, when used correctly, infrared or no-contact thermometers are just as accurate as oral or rectal thermometers. No-contact thermometers are popular among pediatricians, as kids often squirm around when trying to get a temperature read, but it also holds true in mass temperature screenings. 4. What is normal forehead temperature with an infrared thermometer?Normal forehead skin temperature can vary several degrees depending on your environment (indoors or out), exercise, perspiration, direct heat or air conditioning, etc. It would be normal to read an actual forehead skin surface temperature between 91F and 94F if using a general-purpose infrared thermometer. 5. Are infrared thermometers dangerous?As long as the Non-Contact Infrared Thermometers are used properly, they do not represent a risk of possible eye damage, as these Thermometers do not use lasers to measure body heat, the authorized thermometers measure infrared light; therefore they are not dangerous. 6. How far away should you hold an infrared thermometer?Usually, 6 inches is considered the ideal distance for using an infrared thermometer and correctly monitoring the temperature. 7. What is the benefit of using an infrared thermometer?IR thermometers are handy for use in measuring drafts and insulation breakdown. They can pick up hot spots in electrical systems and bearings and help monitor cooling systems. They are even used to measure food storage temperatures and can do this with no cross-contamination. 8. Are digital or infrared thermometers more accurate?Ranging from 0 to 600 Fahrenheit, the best IR Thermometer has a correct accuracy of about ±3.5 Fahrenheit. A digital thermometer could be used in three different ways. The accuracy of each might differ from one another. 9. What are the benefits of a non-contact infrared thermometer?• The non-contact approach may reduce the risk of spreading disease between people being evaluated.• Easy to use.• Easy to clean and disinfect.• Measures temperature and displays a reading rapidly.• Provides the ability to retake a temperature quickly. 10. How do I know if my digital thermometer is accurate?Add a little clean water until the glass is full and stir. Wait for about three minutes before inserting the sensor on the thermometer into the ice-filled water. Wait for about thirty seconds and check that the thermometer reads 32°F. If it does, then it is accurate, but if not, it requires calibration. 

Ⅰ Working Principle1.1 TerminologyA diode is a two-terminal electronic device characterized by unidirectional conductivity—it allows current to flow easily in one direction but severely restricts current from flowing in the opposite direction. Historically, diodes are divided into vacuum tube diodes (formerly called electron diodes) and semiconductor diodes (crystalline diodes). Due to the high heat loss, large size, and lower efficiency of vacuum tubes, semiconductor diodes are the standard in modern electronics.The fundamental principle of a modern diode relies on the PN junction. Adding leads and a protective package to this PN junction creates the discrete component we know as a diode.A semiconductor diode consists of a PN junction formed by joining a P-type semiconductor and an N-type semiconductor. A depletion region (space charge layer) forms at the interface, creating a self-built electric field. In the absence of applied voltage, the diffusion current (caused by the difference in carrier concentration) and the drift current (caused by the internal electric field) balance each other out, resulting in a state of electrical equilibrium.Forward Bias: When a forward voltage is applied, the external electric field opposes the self-built field. This lowers the barrier, causing the diffusion current of carriers to increase significantly, resulting in a forward current (conduction).Reverse Bias: When a reverse voltage is applied, the external field reinforces the self-built field. This widens the depletion region and prevents majority carriers from crossing. Only a tiny "reverse saturation current" flows (leakage), which remains roughly constant over a specific voltage range.Breakdown: When the reverse voltage exceeds a critical threshold, the electric field strength in the depletion layer becomes high enough to trigger a multiplication of carriers. This generates a large number of electron-hole pairs, causing a sharp increase in reverse current. This is known as the breakdown phenomenon. It is worth noting that reverse breakdown is categorized into two types: Zener breakdown (in highly doped junctions at lower voltages) and Avalanche breakdown (at higher voltages). Figure 1. P-type Semiconductor and N-type Semiconductor 1.2 PN JunctionA PN junction is the boundary interface between two types of semiconductor materials: P-type and N-type. The "P" (Positive) region contains an excess of holes, while the "N" (Negative) region contains an excess of free electrons. Due to the concentration gradient, free electrons from the N region diffuse into the P region, and holes from the P region diffuse into the N region. This movement creates the depletion region at the junction.Metal leads are connected to these regions to form terminals: the lead connected to the P-region is the Anode (positive pole), and the lead connected to the N-region is the Cathode (negative pole).1.2.1 Doping PrincipleP-type formation: Intrinsic semiconductors (pure silicon) are doped with trivalent impurities (Group III elements), such as Boron. A Boron atom has only three valence electrons. When it forms covalent bonds with surrounding silicon atoms (which have four electrons), a "hole" (a lack of an electron) is created in the lattice. This hole can accept an electron, effectively making the Boron atom a static negative ion. In P-type material, holes are the majority carriers.N-type formation: Similarly, when intrinsic silicon is doped with pentavalent impurities (Group V elements), such as Phosphorus, the impurity atoms form covalent bonds with silicon. Since Phosphorus has five valence electrons, one excess electron is left free to move. In N-type material, free electrons are the majority carriers. Figure 2. PN Junction StructureWhen these two regions meet, the diffusion of electrons and holes across the boundary disrupts the electrical neutrality near the junction, creating an electric field that eventually stops further diffusion, establishing equilibrium.1.2.2 Feature: Unidirectional ConductivityWhen forward voltage is applied (Anode positive, Cathode negative), the external field pushes holes and electrons toward the junction. This narrows the depletion region and neutralizes the internal electric field. Once the voltage exceeds the threshold voltage (typically ~0.7V for Silicon, ~0.3V for Germanium), the diode conducts current with very low resistance.1.2.3 Supplementary NoteForward Bias: Current flows easily; the diode acts like a closed switch (low impedance).Reverse Bias: Current is blocked; the diode acts like an open switch (high impedance). Ⅱ Diode ApplicationsDiodes are ubiquitous in electronics. From simple power conversion to complex signal processing, they protect circuits, regulate voltage, and enable logic functions. Understanding the diode is the first step to mastering electronics.Function of a Diode in Circuit Design2.1 Main FunctionsDiodes serve four primary roles in modern circuitry:(1) Switching Circuit (Current Steering)In digital logic and computing, diodes utilize their unidirectional conductivity to act as automatic switches. They ensure current flows only when specific conditions are met (like in AND/OR logic gates). Switching diodes (like the 1N4148) are optimized for speed, offering much faster response times than mechanical switches and preventing damage from reverse currents.(2) Limiter/Clipper Circuit (Signal Control)Limiter circuits (or clippers) use diodes to restrict the voltage amplitude of a signal. By placing diodes in parallel with the signal path, any voltage exceeding the diode's forward drop (plus any series reference voltage) is shunted to ground. This is essential for protecting sensitive inputs on microcontrollers or audio equipment from signal spikes.(3) Regulator Circuit (Voltage Stabilization)Zener diodes are the key component here. Unlike standard diodes, Zeners are designed to operate in the reverse breakdown region reliably. If the voltage across a Zener exceeds its "Zener Voltage" (Vz), it conducts heavily, clamping the voltage at that level. This makes them perfect for creating simple voltage references or low-power regulators.(4) Varactor Circuit (Tuning and Frequency Control)Varactor diodes (or Varicaps) act as voltage-controlled capacitors. When reverse-biased, the width of the depletion layer changes with voltage, which changes the junction capacitance. These are widely used in Voltage Controlled Oscillators (VCOs) for tuning radios, TVs, and mobile phones, as well as in frequency modulation (FM) circuits. 2.2 Typical Diode ApplicationsLight-emitting diode (LED)Figure 3. Light-emitting DiodeLEDs emit light when electrons recombine with holes at the PN junction, releasing energy in the form of photons. They have revolutionized lighting due to their safety, high efficiency, durability, and fast response time.Key Applications:1. Consumer Electronics: Backlights for LCD TVs, computer monitors, and smartphone screens.2. Automotive: Used in headlights, brake lights, and turn signals. Their fast switching speed improves safety (brake lights trigger faster than incandescent bulbs), and their longevity reduces maintenance.3. Industrial & Mining: Due to their robustness and efficiency, LEDs are replacing traditional lamps in harsh environments like underground mining.4. Urban Lighting: Replacing high-voltage, fragile neon tubes with LED strips for signage and architectural lighting reduces energy costs and fire risks.Zener diodeZener diodes maintain a constant voltage across their terminals when reverse-biased, even as current fluctuates. They are categorized by their breakdown voltage (e.g., 3.3V, 5.1V, 12V). They can be connected in series to achieve higher regulated voltages. Figure 4. Zener Diode CircuitRectifier diodeRectifier diodes allow current to flow only in one direction, converting Alternating Current (AC) into pulsating Direct Current (DC). This is the fundamental component of power supplies. Figure 5. Full Wave Rectifier CircuitLow Frequency (Mains): For standard 50Hz/60Hz rectification, the 1N400x or 1N540x series are standard. Key parameters are Maximum Rectified Current (Io) and Peak Inverse Voltage (PIV).High Frequency: In Switching Mode Power Supplies (SMPS), standard rectifiers are too slow. Fast Recovery Diodes (FRD) or Schottky diodes are required to handle high switching frequencies efficiently.Detector diodeDetector diodes (often Germanium or Schottky point-contact diodes) possess high detection efficiency and low junction capacitance. They are used to demodulate Amplitude Modulated (AM) signals in radios, extracting the audio signal from the carrier wave.  Figure 6. Detector Diode CircuitSchottky diodeA Schottky diode uses a metal-semiconductor junction rather than a P-N junction. This gives it two distinct advantages: 1. Low Forward Voltage Drop: Typically 0.15V to 0.45V (compared to 0.7V for Silicon), which reduces power loss and heat. 2. High Speed: Zero reverse recovery time makes them ideal for high-frequency switching power supplies, inverters, and motor drivers.Switching diodeDesigned specifically for rapid on/off operations. In the circuit below, VD1 acts as a switch to control the charging path of capacitor C2. Figure 7. Switching Diode CircuitFast recovery diode (FRD)FRDs are PN junction diodes doped to have a significantly reduced Reverse Recovery Time (trr). While a standard rectifier might take microseconds to stop conducting when voltage reverses, an FRD stops in nanoseconds. This is critical in modern power electronics like inverters and PWM controllers to prevent short-circuit currents. Update for 2025: In high-power applications, Silicon Carbide (SiC) diodes are increasingly replacing traditional silicon FRDs due to their ability to handle higher voltages and temperatures with almost zero switching loss.Transient voltage suppressor (TVS)Transient Voltage Suppressors (TVS) are specialized avalanche diodes designed to absorb high-energy spikes. They are the primary defense against ESD (Electrostatic Discharge) and voltage surges in sensitive electronics. Figure 8. Diode Circuit Symbols Ⅲ One Question Related to Diode Functions and Going Further3.1 QuestionWhy do we use diodes in a circuit?3.2 AnswerThe primary function is to serve as an electronic "check valve" or "one-way street" for electricity. This enables: 1. Rectification: Converting AC power (wall outlet) to DC power (batteries/electronics). 2. Protection: Blocking reverse polarity (if you put a battery in backward) or clamping high-voltage spikes (TVS). 3. Signal Manipulation: Demodulating radio signals or creating logic gates. 4. Reference: Providing a stable voltage reference (Zener). Ⅳ Diode Distributors RecommendationWhether you are sourcing standard rectifiers or advanced SiC power diodes, reliability is key. Here are some recommended sources for diode components:Mouser Electronics (Global Distributor)onsemi (Leading Manufacturer)KYNIX Semiconductor (Electronic Component Distributor)Digi-Key Electronics (Global Distributor) Frequently Asked Questions about Diode Function1. What is a diode used for?Its most common function is to allow electric current to pass in one direction (forward direction) while blocking it in the opposite direction (reverse direction). This is used for rectification, protection, and signal isolation. 2. What is the main function of a PN junction diode?It controls the flow of electrons. By manipulating the PN junction bias, it acts as a switch that is either ON (conducting) or OFF (insulating), depending on the direction of voltage applied. 3. What is the function of a rectifier diode?Rectifier diodes are specifically built to handle the conversion of AC (Alternating Current) to DC (Direct Current). They are robust enough to handle the high currents found in power supply units. 4. Do diodes output AC or DC?Diodes do not generate power. However, when an AC source is fed into a diode, the output is pulsating DC. The diode blocks the negative half of the AC cycle, leaving only the positive flow. 5. What is the function of a Zener diode?Zener diodes are used for voltage regulation. Unlike standard diodes, they are designed to conduct in reverse at a specific breakdown voltage (Vz). They are used to stabilize voltage rails and protect circuits from over-voltage surges. 6. What is the difference between a diode and a rectifier?"Diode" is the broad name for the component type (a two-terminal device). "Rectifier" is a function or a specific type of diode designed for power conversion. All rectifiers are diodes, but not all diodes are rectifiers (e.g., LEDs, Zener, and Varactors are diodes but are not used as rectifiers).

The devices or components commonly used in electronic circuits include: resistors, capacitors, inductors, sensors, potentiometers, transformers, diodes, bipolar junction transistors (BJTs), photoelectric switches, resonators, oscillators, filters, silicon controlled rectifiers (SCRs), relays, dual inline package (DIP) switches, fuse holders, bridge rectifiers, emitters, reed switches, common mode chokes and ferrite beads, magnetic rings, etc. This article contains a lot of commonly used electronic components figures, and I hope you will find this information useful.A Simple Guide to Electronic Components FAQ1. What are basic electronic components?You will work with a number of basic electronic components when building electronic circuits, including resistors, capacitors, diodes, transistors, and integrated circuits. 2. What are electronic components called?They are also called Electrical elements or electrical components. e.g. Resistors, Capacitors, Diodes, Inductors. 3. What are the 3 classification of electronic components?Classification of Electronic Components: Components can be classified as passive, active, or electro-mechanic components.Active components are devices that can amplify an electric signal and produce power.Passive components can't introduce net energy into the circuit. 4. What are the two types of electronic components?These are of 2 types: Passive and Active Components. 5. What is passive electronic components?A passive element is an electrical component that does not generate power, but instead dissipates, stores, and/or releases it. Passive elements include resistances, capacitors, and coils (also called inductors). These components are labeled in circuit diagrams as Rs, Cs and Ls, respectively. 6. How do I choose electronic components?How to select electronic components?Manufacturers.Application Circuit Complexity.Electrical Parameters [voltage, current, power, accuracy, response time, speed, resolution, etc.]Mechanical Parameters [dimension, package, weight, etc.]Consideration w.r.t Manufacturing / Testing. 7. What is difference between active and passive components?Active components are the elements or devices which are capable of providing or delivering energy to the circuit. Passive components are the ones that do not require any external source for the operation and are capable of storing energy in the form of voltage or current in the circuit. 8. How to Test Electric Components with a Multimeter?Continuity tests measure if electricity can flow through the part.Resistance tests how much current is lost as electricity flows through a component or circuit.The third common test is for voltage, or the force of the electric pressure. 9. What are passive components?A passive component is an electronic component which can only receive energy, which it can either dissipate, absorb or store it in an electric field or a magnetic field. ... Passive components cannot amplify, oscillate, or generate an electrical signal. Common examples of passive components include: Resistors. Inductors. 10. How do I choose a PCB component?6 tips for choosing PCB componentsThink about component footprint decisions.Use good grounding practices.Assign virtual parts footprints.Ensure you have complete BOM Data.Sort reference designators.Check spare gates. Relevant information about "List of Basic Electronic Components"About the article "List of Basic Electronic Components", If you have better ideas, don't hesitate to write your thoughts in the following comment area. You also can find more articles about electronic semiconductor through Google search engine, or refer to the following related articles:Rectifiers and Filters NotesCharacteristics and Functions of DiodesReview and Application of Electronic skinSwitched Mode Power Supply Tutorial: Principles & Functions of SMPS CircuitsTransformers Basics: Construction, Types, Materials and Design

Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryResearchers from Purdue University showed a range of concepts and technologies about semiconductor industry at international IEDM 2016 Conference in Dec. 2016. Looking forward to the future of semiconductor,which concepts included innovations to extend the performance of today's silicon-based transistors,along with entirely new types of nanoelectronic devices to complement and potentially replace conventional technology in future computers. This is a device is made from the semiconductor germaniumIssueIn the conference,researchers said,"For the past 50 years, ever more electronic devices envelop us in our day-to-day life, and electronic-device innovation has been a major economic factor in the U.S. and world economy," said Gerhard Klimeck, a professor of electrical and computer engineering and director of Purdue's Network for Computational Nanotechnology in the university's Discovery Park. "These advancements were enabled by making the basic transistors in computer chips ever smaller. Today the critical dimensions in these devices are just some 60 atoms thick, and further device size reductions will certainly stop at small atomic dimensions." New technologies will be needed for industry to keep pace with Moore's law, an observation that the number of transistors on a computer chip doubles about every two years, resulting in rapid progress in computers and telecommunications. It is becoming increasingly difficult to continue shrinking electronic devices made of conventional silicon-based semiconductors, called complementary metal-oxide-semiconductor (CMOS) technology, said Muhammad Ashraful Alam, Purdue University's Jai N. Gupta Professor of Electrical and Computer Engineering. "As transistors are becoming smaller they are facing a number of challenges in terms of increasing their performance and ensuring their reliability," he said. Purdue researchers presented five papers proposing innovative designs to extend CMOS technology and new devices to potentially replace or augment conventional transistors during the annual International Electron Devices Meeting (IEDM 2016) Dec. 5-7 in San Francisco. The conference showcases the latest developments in electronic device technology. Purdue researchers are in the  laboratoryIntegrated circuits, or chips, now contain around 2 billion transistors. The more devices that are packed onto a chip, the greater the heating, with today's chips generating around 100 watts per square centimeter, comparable to that of a nuclear reactor. "As a result, self-heating has become a fundamental concern that hinders performance and can damage transistors, and we are making advances to address it," Alam said. Two of the IEDM conference papers detail research to suppress self-heating and enhance the performance of conventional CMOS chips. The remaining papers deal with new devices for future computer technologies that require lower power to operate, meaning they would not self-heat as significantly. "We are not only working to extend the state-of-art of traditional technology, but also to develop next-generation transistor technologies," Alam said. Transistors are electronic switches that turn on and off to allow computations using the binary code of ones and zeros. A critical component in transistors, called the gate, controls this switching. As progressively smaller transistors are designed, however, this control becomes increasingly difficult because electrons leak around the ultra-small gate. One of the conference papers focuses on a potential solution to this leakage: creating transistors that are surrounded by the gate, instead of the customary flat design. Unfortunately, enveloping the transistor with a gate causes increased heating, which hinders reliability and can damage the device. The researchers used a technique called submicron thermo-reflectance imaging to pinpoint locations of excessive heating. Another paper details a potential approach to suppress this self-heating, modeling how to more effectively dissipate heat by changing how the transistor connects to the complex circuitry in the chip.The three remaining papers propose next-generation devices: networks of nanomagnets, extremely thin layers of a material called black phosphorous and "tunnel" field effect transistors, or FETs. Such technologies would operate at far lower voltages than existing electronics, generating less heat. "You want to use as low a voltage as possible because that reduces power dissipation and if you can reduce power dissipation the battery of your cell phone will last longer, you can do more computing with a smaller amount of power and you will be able to cram more functional elements into a given area," Klimeck said. The tunnel FETS could potentially reduce power consumption by more than 40 times. "Reducing power consumption by a factor of 40 would be a huge development," Klimeck said. Another conference paper details research to develop devices made of black phosphorous, which might one day replace silicon as a semiconductor in transistors. Findings showed the devices can pass large amounts of current with ultra-low resistance while demonstrating good switching performance, said Peide Ye, the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering. "We have demonstrated the highest performance of this kind of 2-D device," Ye said.Peide Ye,the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer EngineeringDevices made from the material also could bring new types of optical and chemical sensors. The devices were created using a technique called chemical vapor deposition in research performed at Purdue's Birck Nanotechnology Center. Future research will include efforts to create smaller black phosphorous devices, Ye said. A fifth paper details how networks of nanomagnets could serve as the building blocks of future computers. Findings show the networks mimic Ising networks - named after German physicist Ernst Ising - which harness mathematics to solve complex probabilistic problems. The nanomagnet networks might be used to draw from huge databases to perform demanding jobs in areas ranging from business and finance, to health care and scientific research. The conventional approach to performing big data computations is through new software running on CMOS devices. However, nanomagnet networks represent a different approach: developing an entirely new type of hardware for the feat, said Zhihong Chen, an associate professor of electrical and computer engineering.The nanomagnet arrays are potential building blocks for probabilistic computer hardware has been proved. Researchers are still in unremitting efforts to creat new semiconductor technologies.  Article Provided by Purdue UniversityArticle edited by kynix

Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryFujitsu,a company that provide innovative IT services and digital technologies like mobile,AI,cloud or etc,announced the development of a gallium-nitride(GaN) high-electron mobility transistor(HEMT) power amplifier for use in W-band(75-110 GHz)transmissions in July 2017 at the 12th international Conference. To realize long-distance,high-capacity wireless communications,a promising approach is to utilize the W-band and other high frequency bands that encompass a broad range of usable frequencies, and increase output with a transmission power amplifier. At the same time, demand exists for improved efficiency in power amplifiers in order to mitigate the increased power consumption of communication systems. Fujitsu has now succeeded in developing a power amplifier for use in W-band transmissions that offers both high output power and high efficiency, improving transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance. Fujitsu has achieved 4.5 watts per millimeter of gate width, the world's highest output density in the W-band, and has confirmed a 26% reduction in energy consumption compared to conventional technology. Fujitsu anticipates that setting this power amplifier between wireless communication systems in two locations will achieve high-bandwidth communications at 10 gigabits per second (Gbit/s) over a distance of 10km. Part of this research was carried out with support from Innovative Science and Technology Initiative for Security, established by the Acquisition, Technology & Logistics Agency (ATLA), Japan Ministry of Defense. Development Background Wireless data traffic from mobile communications has increased dramatically over the last few years, and with the spread of 5G and IoT devices it is predicted to increase at an annual growth rate of 1.5 times until the year 2020. In order to build this sort of high capacity next-generation wireless communications network, attention has been focused on wireless communication technology using the high frequency W-band. The range of frequencies that can be used in the W-band is very broad, and because communication speed can be rapidly increased in this band, it is well-suited for this kind of high bandwidth wireless communication. Conventional wireless communications technology, has allowed for performance of several Gbit/s over distances of several kilometers, but achieving an even greater increase in wireless communication distance and capacity utilizing the W-band demands further increases to the output of power amplifiers to boost signals during transmission. Issues To increase distance and capacity, it will be necessary to expand the frequency bandwidth that can be amplified while simultaneously supporting modulation methods that can transmit more information within the same frequency bandwidth, and a strong requirement is to have less distortion when the signal is amplified. Another pursuit is keeping in check the energy consumption of communication systems that accompanies greater distances and capacities, and the improved energy efficiency in power amplifiers.In order to both increase the distance and capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAlGaN) HEMTs, Fujitsu has developed two technologies that effectively reduce internal resistance and current leakage. Features of the newly developed technologies are as follows: Technology to reduce internal resistance Fujitsu has developed device technology that can reliably reduce resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device. The technology utilizes a manufacturing process that embeds GaN plugs directly below the source and drain electrodes, which generate electrons at high densities (fig. 1). It is necessary to transport the electrons that come from the source electrode to the two dimensional electron gas field as smoothly as possible. The structure of the previous technology causes the electron supply layer to become a barrier, however, and internal resistance increases between the source electrode and the two dimensional electron gas. By applying this new technology, Fujitsu succeeded in running high currents through the transistor with significantly less resistance (fig. 2). Technology to control current leakageA current leakage occurs when the two dimensional electron gas, which moves at high speed on the boundary at the top of the channel layer, takes a detour below the gate when the transistor is in its off-state. This leakage causes deterioration in the operational performance of the power amplifier. Normally, it is possible to reduce current leakage by placing a barrier layer beneath the channel layer, but in that case the amount of two dimensional electron gas also decreases, and leads to a reduction of the drain current. This new technology maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This reduces electron detours during operation, successfully providing significant reductions in current leakage(just see the fist and second picture).Effects The previous world record for power amplifier output density in the W-band for transmitters was 3.6 watts per millimeter of gate width with technology developed by Fujitsu Laboratories. This has improved significantly with the newly developed technology, which delivers power output of 4.5 watts per millimeter of gate width for a power amplifier designed to operate at 94GHz. In addition, this new technology achieved a reduction in energy consumption of 26% compared to the previous technology through a reduction in current leakage. It is anticipated that the use of this power amplifier will allow the achievement of high capacity, long distance wireless communications between two connected systems at different locations at over 10Gbit/s and at distances greater than 10km.Fujitsu aims to apply this technology broadly to the development of power amplifiers for purposes that call for wireless communications that offer long range and higher capacity, while offering easier installation than fiber optics. The goal is to commercialize this technology in high speed wireless communication systems by 2020, with an aim to employ it in such situations as a method of restoring communications when fiber optic cables have been severed by natural disasters or as a way of setting up temporary communications infrastructure when holding events.  Article provide by FujitsuArticle edited by kynix

SummaryFor years,people had treated the poor conductivity of organics as an unavoidable fact,and this shows that that is no always the case. Said Stephen Forrest,the Peter A. Franken Distinguished University Professor of Engineering and Paul G. Goebel Professor of Engineering at U-M, who led the research,which is  a way to coax electrons to travel much further than was previously thought possible in the materials often used for organic solar cells and other organic semiconductors under the condition of pushing cheap,ubiquitous solar power closer to reality. The fatal weakness of organic material may adjust its conductivityUnlike the inorganic solar cells widely used today, organics can be made of inexpensive, flexible carbon-based materials like plastic. Manufacturers could churn out rolls of them in a variety of colors and configurations, to be laminated unobtrusively into almost any surface. Organics’ notoriously poor conductivity, however, has slowed research. Forrest believes this discovery could change the game.  The team showed that a thin layer of fullerene molecules—the curious round carbon molecules also called Buckyballs—can enable electrons to travel up to several centimeters from the point where theyre knocked loose by a photon. That’s a dramatic increase; in today's organic cells, electrons can travel only a few hundred nanometers or less. But organic materials have much looser bonds between individual molecules, which can trap electrons. This has long been an Achilles’ heel of organics, but the new discovery shows that it may be possible to tweak their conductive properties for specific applications. The ability to make electrons move more freely in organic semiconductors The ability to make electrons move more freely in organic semiconductors could have far-reaching implications. For example, the surface of today's organic solar cells must be covered with a conductive electrode that collects electrons at the point where they’re initially generated. But freely moving electrons can be collected far away from their point of origination. This could enable manufacturers to shrink the conductive electrode into an invisible grid, paving the way for transparent cells that could be used on windows and other surfaces. “This discovery essentially gives us a new knob to turn as we design organic solar cells and other organic semiconductor devices,” said Quinn Burlingame, a U-M electrical engineering and computer science graduate researcher and author on the study. “The possibility of long-range electron transport opens up a lot of new possibilities in device architecture.” Burlingame says that the initial discovery of the phenomenon came as something of an accident as the team was experimenting with organic solar cell architecture in hopes of boosting efficiency. Using a common technique called vacuum thermal evaporation, they layered in a thin film of C60 fullerenes—each made of 60 carbon atoms—on top of an organic cell's power-producing layer, where the photons from sunlight knock electrons loose from their associated molecules. On top of the fullerenes, they put another layer to prevent the electrons from escaping. They discovered something they’d never seen before in an organic—electrons were skittering unfettered through the material, even outside the power-generating area of the cell. Through months of experimentation, they determined that the fullerene layer formed what's known as an energy well—a low-energy area that prevents the negatively charged electrons from recombining with the positive charges left behind in the power-producing layer.“You can imagine an energy well as sort of a canyon—electrons fall into it and can’t get back out,” said Caleb Cobourn, a graduate researcher in the U-M Department of Physics and an author on the study. “So they continue to move freely in the fullerene layer instead of recombining in the power-producing layer, as they normally would. It's like a massive antenna that can collect an electron charge from anywhere in the device.”Forrest cautions that widespread use of the discovery in applications like solar cells is theoretical at this point. But, he is excited by the discovery’s larger implications for understanding and exploiting the properties of organic semiconductors. “I believe that ubiquitous solar power is the key to powering our constantly warming and increasingly crowded planet, and that means putting solar cells on everyday objects like building facades and windows,” Forrest said. “Technology like this could help us produce power in a way that’s inexpensive and nearly invisible.” The study is titled “Centimeter-Scale Electron Diffusion in Photoactive Organic Heterostructures.” The research was supported by the U.S. Department of Energy SunShot Program and by the Air Force Office of Scientific Research.    Article from University of MichiganArticle edited by kynix